Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Biccari, Francesco; Boschetti, Alice; Pettinari, G.; China, Federico La; Gurioli, Massimo; Intonti, Francesca; Vinattieri, A.; Sharma, Mayank; Capizzi, M.; Gerardino, Annamaria; Businaro, Luca; Hopkinson, M.; Polimeni, A.; Felici, Marco

doi:10.1002/adma.201705450

Cited by 26 publications

(44 citation statements)

References 73 publications

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“…The inhomogeneous broadening of the emission energy of the realized QDs (~20 meV) is the same as the linewidth of the pristine GaAsN/GaAs QW, suggesting that such a value could be improved by using a higher quality QW. Also, the QDs obtained by near-field optical illumination emit in the single-photon regime, independently of the QD emission energy [30]; see Figure 5e,f. turn, this should result in a larger confinement-induced blueshift, as rather clearly observed in the data reported in Figure 5c,d.…”

Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 90%

“…Inverted Pyramids [11] InGaAs/GaAs <50 1.4 Pyramids [13,14] InAs/InP 50 50 Nanoholes [16,17] InAs/GaAs 80 70 Spatially selective H incorporation [28,29] GaAsN/GaAs 20 30 Spatially selectiveH removal [30] GaAsN/GaAs <100 20 In this review, we report on an innovative approach we developed for the fabrication of site-controlled QDs, which are able to emit down to the single-photon regime. Our approach is based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN) [28][29][30]. Our fabrication strategy, at variance with the approaches proposed so far in the literature that rely on complex growth procedures often followed by cumbersome processing steps, starts from standard dilute-nitride quantum well samples and acts at a post-growth level.…”

Section: Technique Qd Materials ∆X (Nm) ∆E (Mev)mentioning

confidence: 99%

“…That approach is very versatile, post-growth, and naturally suited for the integration of QDs in photonic structures. The approach acts on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors on a nanometer scale, as will be discussed in the following sections [28,30,79,80].…”

Section: A Novel Approach For Site-controlled Quantum Emitter Fabricamentioning

confidence: 99%

“…However, it is necessary to overcome the diffraction limit of objective lenses in order to employ such a strategy for QD fabrication [82]. Very recently, this goal was reached by shining a hydrogenated GaAsN sample through the tip of a scanning near-field optical microscope (SNOM), thus achieving spatial accuracy < 100 nm via a fully optical approach [30]. In order to test the QD fabrication process under conditions similar to those needed for the realization of an integrated QD-photonic crystal cavity system, the sample was processed with an array of well-separated circular areas in which the QW was suspended with respect to the substrate, as shown in Figure 5a,b.…”

Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 99%

“…The value of g (2) (0) < 0.5 is a proof of the single photon emitter nature of the fabricated GaAsN QDs. Panels (b-f) were adapted with permission from [30]. Copyright 2018 WILEY-VCH Verlag GmbH & Co.…”

Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 99%

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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

et al. 2018

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We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination-coupled to the ultra-sharp diffusion profile of H in dilute nitrides-allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented.Photonics 2018, 5, 10 2 of 18 etched in a GaAs substrate [8][9][10], which gives a position accuracy of about 50 nm [11]. Preferential sites for QD nucleation can also be defined by growing InP pyramids by selective-area epitaxy [12][13][14] or by patterning the substrate with nano-hole arrays [15][16][17][18][19], with a spatial accuracy better than 50 nm and 80 nm, respectively, and a possible integration with photonic devices. The main characteristics of those site-controlled QD fabrication techniques are reported in Table 1. Other approaches to the fabrication of site-controlled QDs include the self-organization of individual InAs QDs by scanning tunneling probe-assisted nanolithography [20], the "vicinal substrate" approach [21], the nucleation of InAs QDs on strain modulated buffer layers grown on submicron mesa arrays [22], and quantum-well etching [23]. All the techniques not included in Table 1, however, are either incompatible with the integration with optical micro-cavities, since they are characterized by an insufficient spatial accuracy, or not really scalable, and therefore unsuitable for future applications in quantum information technology.Different lithographic strategies have also been developed to deterministically fabricate a photonic device around a post-selected, self-assembled QD [2,[24][25][26]. These techniques, which can reach a spatial accuracy up to 50 nm, avoid in principle the need for site-controlled QDs. However, they are intrinsically not scalable-and therefore not suitable for the mass production-although strategies for increasing the number of implemented devices within a given processing time are being investigated [27].

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Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 90%

Section: Technique Qd Materials ∆X (Nm) ∆E (Mev)mentioning

confidence: 99%

Section: A Novel Approach For Site-controlled Quantum Emitter Fabricamentioning

confidence: 99%

Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 99%

Section: Qd Direct Writing By Near Field Illuminationmentioning

confidence: 99%

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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

et al. 2018

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Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

Filippone

Younis

Mattioli

et al. 2021

Adv Funct Materials

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In dilute nitride InyGa1−yAs1−xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the InyGa1−yAs host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix.

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Origin and Potentialities of the Selective Host‐Matrix Effect in Hydrogenated III‐V‐N Alloys.

Filippone,

Amore Bonapasta

2024

Adv Funct Materials

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In a previous study, puzzling experimental results regarding the neutralization of N effects on the bandgap energy in the hydrogenated In0.21Ga0.79As0.975N0.025 alloy were explained by theoretical investigations revealing the occurrence of a novel phenomenon: thermal annealing changes the InGaAs host‐matrix by making it able to exert a selection of the N–H complexes responsible of the N neutralization. In view of technological applications of this effect, the underlying selective host‐matrix model was carefully checked here by theoretically investigating InGaAsN alloys of different compositions ranging from Ga‐rich to In‐rich. As a most important result, such an extensive investigation inspired a comprehensive explanation of the origin of the host‐matrix effect which clarifies how the effect works, firmly establishes its occurrence, gives indications for a bandgap tuning based on a matrix design, sets conditions for its extension to other III‐V‐N alloys and suggests ways to induce fine changes of the alloy mechanical behavior.

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Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Cited by 26 publications

References 73 publications

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

Origin and Potentialities of the Selective Host‐Matrix Effect in Hydrogenated III‐V‐N Alloys.

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