Photoluminescence from SiO<inf>2</inf> nanostructures prepared by a sequential RIE process

Abstract

Si02 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous Si02 layer, using mixture of SF6, H2 and O2 gases. Photoluminescence measurements depicts that nano-textured Si02 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous Si02 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the Si02 nanostructures has also been studied using field-emission scanning electron microscopy.

Optical Characterization of ALD-Coated Nanoporous Alumina Structures: Effect of Sample Geometry or Coated Layer Material

“…Consequently, the photoluminescence character of the NPA-bSs and the possible effect of sample geometry and even cover layer material on PL results have also been considered. In fact, photoluminescence for different kinds of SiO 2 -based films (nanotextured SiO 2 and silicon oxynitride films, SiO 2 -coated ZnO nanoparticles, or SiO 2 layers on Si support) as well as for a layered nanostructure (multi-walled carbon nanotube-TiO 2 nanofiber composite), as a result of surface oxygen vacancies and other defects, have also been reported [71][72][73][74][75][76][77]. Therefore, an additional method to tune the intensity of PL is the use of appropriate coatings, which can have an active or passive role in PL effects.…”