Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy

Sadofyev, Yu. G.; Konnov, V. M.; Loiko, N. N.; Gippius, A. A.

doi:10.1116/1.1377589

Cited by 2 publications

(5 citation statements)

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“…As for the physical method, MBE and PLD are both applied to obtain the RE‐doped TMDs. Yb‐doped ZnTe layers have been fabricated using MBE on GaAs substrates . The 1‐μm ZnTe buffer layer was deposited before the introduction of 1.5 μm Yb‐doped ZnTe layers.…”

Section: Materials Classification and Synthesismentioning

confidence: 99%

“…The striking red‐shift of the PL peaks for the Eu 3+ arose, compared with the bulk or nanoparticle materials containing Eu 3+ , indicated that the crystal field surrounding Eu ions in the 2D single layer of MoS 2 with a higher anisotropy can efficiently distort the degenerate orbitals (Figure ‐). High‐quality ZnTe layers with Yb doping were prepared and the Yb dopant showed optically active if it was associated with other impurities . The oxygen probably took part in the energy transfer process.…”

Section: Applicationsmentioning

confidence: 99%

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Rare‐earth‐incorporated low‐dimensional chalcogenides: Dry‐method syntheses and applications

Zhang

Zhao

Zhang

et al. 2020

InfoMat

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Chalcogenide thin films incorporating rare-earth (RE) elements with applications in optics, electronics, and magnetics have received considerable attention. Aiming at growing pure chalcogenides, dry-method syntheses have been developed. In this review, we summarize the progress thus far on lowdimensional RE-based chalcogenides (RECs), covering fabrication methods, structures, and applications. This review also provides the summary and perspectives of the challenges of fabrication and opportunities on the application of RECs in the future.chalcogenide, dry-method synthesis, rare earth elements

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Section: Materials Classification and Synthesismentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Rare‐earth‐incorporated low‐dimensional chalcogenides: Dry‐method syntheses and applications

Zhang

Zhao

Zhang

et al. 2020

InfoMat

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“…Basing upon our data on Yb 3þ ion emission activation an additional oxygen implantation into the MBE Yb-doped ZnTe samples and subsequent annealing were performed [2]. The oxygen was implanted into ZnTe : Yb structures using a set of energies and doses to produce flat profile of dopants up to the depth of 0.5 mm with concentration in the range of 1 Â 10 17 -1 Â 10 20 cm -3 at room temperature.…”

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confidence: 99%

“…A strong temperature stable Yb-related luminescence was observed in more than 60 samples. The detail of the sample preparation procedure is given in [2]. It was shown that the optimal Yb and oxygen concentrations are $5 Â 10 18 cm -3 and $3 Â 10 19 cm -3 , respectively.…”

mentioning

confidence: 99%

“…Discussion It has been shown earlier that Yb can be rendered optically active in III-V and II-VI compounds if it is incorporated in some three-component complexes containing background or deliberately introduced impurities (S, Se, Te, Si, C in III-V and Si, C in II-VI plus oxygen in both) [2][3][4]. Oxygen seems to be a necessary component of Yb related centers in ZnTe, its crucial role in optical activation of Yb is possibly due to its participation in the process of energy transfer from electron-hole pairs to RE ions.…”

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confidence: 99%

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Photoluminescence of Yb Doped ZnTe

Loiko

Konnov

Sadofyev

et al. 2002

phys. stat. sol. (b)

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The photoluminescence from ZnTe : Yb films grown on (100) GaAs by MBE was studied at different temperatures (4.2-350) K. The efficient Yb 3þ -related emission in ZnTe was observed up to room temperature. The analysis of the fine structure of the Yb luminescence spectra allowed us to suggest the energy level diagram of the crystal-field-split 4f 13 levels for the dominant complex center based on Yb ion. IntroductionThe basis of possible applications of RE-doped semiconductors such as light emitting devices is the opportunity to combine the sharp, temperature stable, atom like emission due to radiative transitions in the unfilled 4f n shell of rare-earth (RE) ions with the advantages of electrical pumping in semiconductor structures. Optical properties of RE element doped semiconductor have been widely studied, but the luminescence efficiency is still rather low and the intensity rapidly decreases at high temperatures. Intensity of f-f luminescence in RE doped semiconductors is determined by following factors: total amount of RE luminescence centers, general quality of RE doped crystals which determines the efficiency of competing non-radiative processes, efficiency of energy transfer from electron and holes to RE luminescent centers, probability of optical transitions within 4f shell of RE centers. The latter two characteristics depend upon the structure of luminescence centers, that is on the lattice position of RE impurity and its possible association with other impurity and/or defects. Due to high chemical activity of RE elements, their associations with other chemical dopants are quite common. It is known that co-doping of RE in II-VI compounds is a prerequisite for their optical activity and photoluminescence efficiency of RE in ionic hosts is usually highest for RE complexes [1]. In the present work the studies of the luminescence properties of Yb doped ZnTe grown by MBE were carried out in a wide temperature range in order to determine the conditions required for attainment of efficient RE emission. The advantage of MBE growth of II-VI compounds is the rather low temperature of their synthesis, which grants a low desorption rate of adsorbed RE atoms from a substrate surface during MBE and efficient Yb incorporation into the host crystal which is a prerequisite for the production of RE emitting material.

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Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy

Cited by 2 publications

References 5 publications

Rare‐earth‐incorporated low‐dimensional chalcogenides: Dry‐method syntheses and applications

Rare‐earth‐incorporated low‐dimensional chalcogenides: Dry‐method syntheses and applications

Photoluminescence of Yb Doped ZnTe

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