Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shape

Новиков, А. В.; Shaleev, M. V.; Lobanov, D. N.; Yablonsky, A. N.; Vostokov, N. V.; Krasilnik, Z. F.

doi:10.1016/j.physe.2003.12.138

Cited by 7 publications

(7 citation statements)

References 9 publications

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“…This observation coincides with the results of our previous PL studies of structures with Ge(Si) islands which have revealed that Ge(Si) dome islands grown at T g = 600 • C demonstrate the most intensive PL signal at RT in comparison with islands grown at other temperatures [23]. This fact is associated with the best localization of holes in the dome nanoislands grown at T g = 600 • C [23], because this temperature is the lowest growth temperature for the dome-island formation [24,25]. The increase of the growth temperature above 600 • C leads to an enhancement of the Si diffusion into the dome islands [26,27].…”

Section: Electroluminescence and Photoconductivity Of Structures Withmentioning

confidence: 80%

“…The decrease of T g from 600 • C to 550 • C results in morphology transition in the growth of Ge(Si) self-assembled islands [24,25]. In this temperature range, the transition of the island type, dominating the surface, occurs from dome island to hut island growth [24,25]. This transition is accompanied by a dramatic decrease of the island height.…”

Section: Electroluminescence and Photoconductivity Of Structures Withmentioning

confidence: 99%

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SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Krasilnik

Новиков

Lobanov

et al. 2010

Semicond. Sci. Technol.

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The effect of structure parameters on the electroluminescence and photoconductivity of multilayer structures with self-assembled Ge(Si)/Si(0 0 1) islands has been studied. The highest intensity of the room-temperature electroluminescence in the wavelength range of 1.3-1.55 μm has been observed for the islands grown at 600 • C. The same diode structures with Ge(Si)/Si(0 0 1) islands have demonstrated room-temperature photoconductivity signals in the wavelength range of 1.3-1.55 μm. The observed overlap of the electroluminescence and photoconductivity spectra obtained for the same structures with Ge(Si) islands makes these structures a promising material for the fabrication of a Si-based optocoupler. Less degradation after neutron irradiation has been observed for the electroluminescence and photoconductivity signals from multilayer structures with Ge(Si) self-assembled islands in comparison with bulk silicon structures. This result is associated with more effective confinement of charge carriers in the multilayer structures with Ge(Si) islands.

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Section: Electroluminescence and Photoconductivity Of Structures Withmentioning

confidence: 80%

Section: Electroluminescence and Photoconductivity Of Structures Withmentioning

confidence: 99%

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Krasilnik

Новиков

Lobanov

et al. 2010

Semicond. Sci. Technol.

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“…in the growth of self-assembled Ge(Si) islands [19,20]. In this temperature range, the type of islands dominating on the surface changes from the dome nanoislands to the pyramidal (hut) ones, which is accompanied by a sharp decrease in the average height of islands [20].…”

Section: Resultsmentioning

confidence: 99%

“…In this temperature range, the type of islands dominating on the surface changes from the dome nanoislands to the pyramidal (hut) ones, which is accompanied by a sharp decrease in the average height of islands [20]. Due to quantum-dimensional effects, the last circumstance causes the expulsion of an energy level of holes in the island towards the edge of the silicon valenceband that also results in the deterioration of localization of holes in islands.…”

Section: Resultsmentioning

confidence: 99%

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

et al. 2009

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-The electroluminescence (EL) of multilayered p -i -n structures with the self-assembled Ge(Si)/Si(001) islands are investigated. It is found that the structures with islands grown at 600 ° C have the highest intensity of the electroluminescence signal at room temperature in the wavelength range of 1.3-1.55 µ m. The annealing of structures with the Ge(Si) islands leads to an increase in the EL-signal intensity at low temperatures and hampers the temperature stability of this signal, which is related to the additional Si diffusion into islands during annealing. The found considerable increase in the electroluminescence-signal intensity with the thickness of the separating Si layer is associated with a decrease in the elastic stresses in the structure with an increase in this layer's thickness. The highest EL quantum efficiency in the wavelength range of 1.3-1.55 µ m obtained in investigated structures amounted to 0.01% at room temperature.

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“…The thickness of the second Ge layer was d 2 ¼h c2 +3 ML, where h c2 ¼4 ML is the critical thickness of island formation in the second layer. At used growth conditions the dome islands with the surface density of 2 Â 10 10 cm À 2 and characteristic dimensions of 50-60 nm in lateral size and 12-14 nm in height were formed in the first and the second island layers [22]. The vertical ordering of islands in the investigated structures was obtained by TEM [23].…”

Section: Methodsmentioning

confidence: 99%