Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy

Koike, Kazuto; Hotei, T.; Kawaguchi, Ryou; Yano, Mitsuaki

doi:10.1016/j.jcrysgro.2008.10.112

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“…Decrease in the bandgap can be achieved by alloying with SnTe. Recently, Pb 1 À x Sn x Te/CdTe (0rx r0.2) quantum wells and SnTe/PbTe/CdTe double quantum wells (DQWs), both grown on GaAs (0 0 1) by MBE, were studied [18][19][20]. In the first case optical measurements were accomplished at 300 K for different Sn content x, where the shift toward the lower energy with increasing x was observed.…”

Section: Introductionmentioning

confidence: 99%