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Epitaxial quantum dots with symmetric and highly facetted shapes are fabricated by thermal annealing of two-dimensional (2D) PbTe epilayers embedded in a CdTe matrix. By varying the thickness of the initial 2D layers, the dot size can be effectively controlled between 5 and 25nm, and areal densities as high as 3×1011cm−2 can be achieved. The size control allows the tuning of the quantum dot luminescence over a wide spectral range between 2.2 and 3.7μm. As a result, ultrabroadband emission from a multilayered quantum dot stack is demonstrated, which is a precondition for the development of superluminescent diodes operating in the near infrared and midinfrared.

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Epitaxial quantum dots with symmetric and highly faceted shapes are fabricated by thermal annealing of two-dimensional (2D) PbTe epilayers embedded in a CdTe matrix. This novel self-organization scheme is based on the immiscibility of the involved semiconductor materials, which originates from the different bulk bonding configurations and the concomitant lattice-type mismatch. By varying the thickness of the initial 2D layers, the dot size can be controlled in a range between 5 and 25 nm, with areal densities as high as 3 × 10 11 cm −2 . Control of the quantum dot size allows for photoluminescence tuning over a spectral range between 2.2 and 3.7 µm. Multilayer quantum dot stacks with systematically varying sizes yield ultra-broadband emission, and thus a precondition for the development of superluminescence diodes operating in the near-and mid-infrared.

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