2001
DOI: 10.1016/s0927-0248(00)00294-4
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Photoluminescence properties of sodium incorporation in CuInSe2 and CuIn3Se5 thin films

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Cited by 27 publications
(16 citation statements)
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“…Thus, the effective hole density increases [3,7]. However, as the Na concentration increases to the level where the most of the In Cu defects have been eliminated, it starts to remove the acceptor V Cu .…”
Section: Solar Cell Parametersmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, the effective hole density increases [3,7]. However, as the Na concentration increases to the level where the most of the In Cu defects have been eliminated, it starts to remove the acceptor V Cu .…”
Section: Solar Cell Parametersmentioning
confidence: 99%
“…The observed changes include improvements in the open-circuit voltage [3,4], preferential grain orientation [4], increased grain size and carrier concentration [5,6].Using the photoluminescence (PL) measurements, Kimura et al [7] found that by Na incorporation the compensation of CuInSe 2 was reduced due to the suppression of donor-type defects.…”
Section: Introductionmentioning
confidence: 99%
“…Changes in the electrical characteristics of the films have also been observed, including a decrease in electrical resistivity [5,8,9] and an increase in net carrier concentration [10][11][12][13][14] in p-type material, indicated by capacitance measurements. In epitaxial [15] as well as polycrystalline films [5], it has been explained as occurring through a reduction of compensating donors, rather than a direct or indirect acceptor doping action, yet in one study the incorporation of Na in CIGS films was found to result in the creation of a shallow acceptor state 75meV above the valence band [16]. Whatever the mechanism, the almost universally accepted view that Na acts to increase the hole concentration at room temperature in CIGS thin films is in apparent contradiction with the work done in this laboratory on melt-grown bulk CIS.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the various effects of sodium on the polycrystalline layer itself have been extensively studied, revealing a (112) preferred orientation in both CIGS [1] and CuInSe 2 (CIS) [2][3][4][5], as well as an increased grain size [2,[5][6][7][8] in films grown in the presence of Na. Changes in the electrical characteristics of the films have also been observed, including a decrease in electrical resistivity [5,8,9] and an increase in net carrier concentration [10][11][12][13][14] in p-type material, indicated by capacitance measurements. In epitaxial [15] as well as polycrystalline films [5], it has been explained as occurring through a reduction of compensating donors, rather than a direct or indirect acceptor doping action, yet in one study the incorporation of Na in CIGS films was found to result in the creation of a shallow acceptor state 75meV above the valence band [16].…”
Section: Introductionmentioning
confidence: 99%
“…It has been shown that the presence of sodium during the growth of CIGS absorber layers is beneficial to cell performance, particularly with regard to open-circuit voltage (V oc ) and fill factor (FF) [1,2]. In addition, the cell performance of CIGS grown with Na is generally more homogeneous over a large range of Cu concentrations [3,4].…”
Section: Introductionmentioning
confidence: 99%