Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

Мездрогина, М. М.; Krivolapchuk, V. V.; Феоктистов, Н. А.; Danilovskii, E. Yu.; Kuzmin, Roman; Razumov, S. V.; Кукушкин, С. А.; Осипов, А. В.

doi:10.1134/s1063782608070038

Cited by 4 publications

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“…4a-4c) and with the segregation of Eu and Er impurities, as well as with the non optimal local crys tal (ligand) environment. In our previous work [12], we also revealed emission lines of low intensity, which are characteristic of intracenter transitions of erbium; however, the ZnO films were not subjected to post growth treatment, and the erbium concentration (C Er < 10 17 cm -3 ) was insufficient to ensure intense emission, which is characteristic of the intracenter 4f transitions of erbium. As compared to the intensity of emission of the intracenter transitions of Eu and Er, the intensity of emission of the intracenter 4f transi tions of Sm and Tm in the type II ZnO films is high enough (Figs.…”

Section: Resultsmentioning

confidence: 85%

“…The luminescence spectra of single crystal ZnO films of types I and II are similar to the spectra of films of bulk ZnO crystals studied in our previous work [12]. The spectra under investigation are compared in the luminescence intensity I, the full width at half maxi Earlier, it was shown that the intensity of emission of the intracenter transitions of rare earth ions intro duced into the semiconductor matrix is determined by the concentration of impurity-defect complexes of the matrix [14].…”

Section: Discussion Of the Resultsmentioning

confidence: 96%

“…Sapphire, which is used for deposition of the type I ZnO films, according to the X ray fluorescence analy sis, has an iron impurity, which, as was shown in [12], leads to a decrease in the photoluminescence intensity. In addition, the type I ZnO films have an Al impurity.…”

Section: Discussion Of the Resultsmentioning

confidence: 98%

“…1a. The spectra are homogeneously broadened with a high luminescence intensity I and the maximum wavelength λ max = 368 nm, which cor responds to the position of the B exciton bound at the neutral donor (D 0 , X B ) in bulk ZnO crystals [12]. The full width at half maximum (FWHM) is equal to 40 meV.…”

Section: Resultsmentioning

confidence: 99%

“…The X ray fluorescence analysis allows the con clusion that the type II ZnO films contain iron impu rities, which, according to [12,13], can lead to a decrease in the intensity of luminescence observed in this case in the NEPL region. toluminescence spectra of the films under investiga tion.…”

Section: Resultsmentioning

confidence: 99%

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Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

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The influence of annealing in the medium of an ionized nitrogen, additionally introduced impu rities, and regimes of post growth annealing on photoluminescence spectra of intracenter 4f transitions of rare earth metal dopants (Ce, Eu, Sm, Er, Tm, Yb) in crystalline ZnO films has been investigated. The films have been prepared using molecular beam epitaxial growth and magnetron sputtering. According to the X ray diffraction analysis, the films have a single crystal structure. It has been shown that the annealing in the medium of an ionized nitrogen, regardless of the method used for producing the ZnO films, leads to signifi cant changes in the photoluminescence spectrum, i.e., to a decrease in the emission intensity and a shift in the position of the emission maximum toward the long wavelength range of the spectrum. The nitrogen con centration has been determined by the nuclear reaction method. It has been revealed that the spectra contain intense emission lines due to the intracenter 4f transitions of rare earth elements (Sm, Er, Tm, Yb) in the crystalline ZnO films prepared by magnetron sputtering, and the intensity of the emission lines increases upon introduction of codopants, namely, Ce and Er.

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Section: Resultsmentioning

confidence: 85%

Section: Discussion Of the Resultsmentioning

confidence: 96%

Section: Discussion Of the Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

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MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

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Intensity of emission from intracenter 4f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions

et al. 2012

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Most studies concerned with the potential for rais ing the intensity of emission due to the intracenter 4f transition in Er, 4 I 13/2 -4 I 15/2 (λ = 1540 nm) in films of amorphous hydrogenated silicon a Si:H doped with Er [a Si:(H, Er)] have been carried out because of the prospects for use of this semiconductor in fiber optic communication systems [6], owing to the possibility of its integration into silicon technology.To elucidate the mechanism by which REI lumi nescence spectra are formed in ZnO, GaN, and a Si:H, it is necessary to analyze (i) the position of REIs in the semiconductor matrix and the interaction of REIs with defects and impurities, (ii) position of the energy levels of REIs relative to the valence and conduction bands of the semiconductors, (iii) excitation mecha nisms and kinetic models describing the luminescence related to intracenter 4f states in REIs, (iv) REI lumi nescence quenching processes, and (v) the influence exerted by the concentration of REIs and an addition ally introduced impurity (co dopant), introduced into the semiconductor, on its photoluminescence (PL) spectra.Several studies on a Si:(H, Er) have been devoted to solving a number of problems mentioned above [6][7][8].In [6,7], basic results obtained when analyzing the influence exerted by the local environment of REIs in the amorphous matrix of a Si:H were reported. These results are used in studies of crystalline semiconductor matrices, GaN:(Eu, Er) and ZnO:(Eu, Er).Abstract-It is shown that the intensity of emission from intracenter 4f transitions in amorphous a Si:H films and crystalline (GaN, ZnO) films doped with rare earth ions is governed by the local environment of doping impurity ions. In the case of a Si:H, a pseudo octahedron with the C 4V point group is present due to nanocrystallites, which provides a local environment for rare earth ions. In the case of a hexagonal crystal lattice in crystalline GaN and ZnO films, the local symmetry of rare earth ions introduced into the semicon ductor matrix by diffusion, with a pseudo octahedron with the C 4V point group, is formed by stresses due to rare earth ion-oxygen complexes with a radius exceeding that of host ions incorporated at crystal lattice sites. In contrast to GaN films, ZnO films exhibit, on being doped with Tm, Sm, and Yb, both high intensity emission in the long wavelength spectral region, characteristic of intracenter 4f transitions in rare earth ions, and a substantial increase in intensity in the short wavelength spectral region (λ = 368-370 nm). GaN films doped with rare earth ions exhibit in this spectral range only an inhomogeneously broadened emission spec trum due to the presence of an emission band characteristic of donor acceptor recombination.

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Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

Cited by 4 publications

References 1 publication

Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

Intensity of emission from intracenter 4f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions

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