Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

Abstract

ZnO doped with N and/or As layers was fabricated by thermal oxidation of ZnTe films grown by MBE on different substrates. Hall effect measurements demonstrated p-type conductivity with a hole concentration of ∼5 × 10 19 cm −3 for ZnO:As and ZnO:As:N on GaAs substrates and ∼6 × 10 17 cm −3 for ZnO:N on ZnTe substrates. The concentration of N and As atoms in ZnO is estimated to be ∼10 20 cm −3 . This suggested that simple substitutional N atoms form acceptor impurities with a smaller efficiency than an As-related complex, probably As Zn -2V Zn. In particular, we were able to distinguish between nitrogen and arsenic acceptor-related luminescence. Optical studies showed meaningful differences of the PL features in samples with different acceptors, grown on different substrates.

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

“…Quite frequently, this band is observed after www.pss-b.com intentional p-type doping with group V elements like nitrogen [4,5], phosphorous [6][7][8], antimony [9], and arsenic [10]. Expecting that the new PL bands observed after doping must be directly related to the substitutional dopant species, most authors label the 3.31 eV peak as an acceptor bound exciton (A 0 ,X) or as a donor-acceptor pair transition.…”

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

“…Next, they were oxidized in a horizontal tube furnace by annealing in an oxygen flow for 2 h at 500 1C. Our annealing time exceeds rapid annealing used for ZnTe films (1-25 min) [35,36] and is comparable to the long annealing (1-5 h) applied toward ZnS [44,45] and Zn x N y [46][47][48] films to assure full transformation of ZnSe into the ZnO. Thickness of ZnSe films was varied between 300 nm and 1 mm.…”

“…In particular, p-type doping utilizing thermal As diffusion from GaAs substrates into the ZnO films [18,21,[30][31][32][33][34] and by oxidation of the ZnTe/GaAs heterostrucutres [35,36] was realized by a number of research groups. In addition, both n-and p-type ZnO films were synthesized through the annealing of undoped ZnSe crystals in the activated oxygen atmosphere (radical beam gettering epitaxy) [37,38].…”

Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO

“…Contrary to ZnO, ZnTe can be obtained as a highly p-type doped material. Moreover, it was already shown that thermal oxidation of nitrogen-doped ZnTe allows to obtain p-type ZnO [3]. Up till now the fabrication of ZnTe/ZnO core/shell NW structures was realized by a * corresponding author; e-mail: kgas@ifpan.edu.pl combination of two different growth methods.…”