Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes

Hall, R. S.; Gordon, Neil T.; Giess, J.; Hails, Janet E.; Graham, Andrew; Herbert, D C; Hall, D.; Southern, Paul; Cairns, J. W.; Lees, David J.; Ashley, T.

doi:10.1117/12.603386

Cited by 18 publications

(16 citation statements)

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“…Several groups [1][2][3][4][5][6][7][8][9][10][11][12] have reported multiplication gains of M = 100 to 1000 at low values of reverse bias, around 10 V, associated with a quasideterministic multiplication which yields a conserved signal-to-noise ratio (SNR). These exceptional characteristics are due to an exclusive impact ionization of the electrons, which is why these devices have been termed electron-initiated avalanche photodiodes (e-APDs).…”

Section: Introductionmentioning

confidence: 99%

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

Perrais

Derelle

Mollard

et al. 2009

Journal of Elec Materi

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The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gain, with a maximum value of M = 5000 for the diffusion current at a reverse bias of V b = 12 V. When the light was injected in the depletion layer, the gain was reduced as the injection approached the N+ edge of the junction. The impulse response was limited by the diode series resistance-capacitance product, RC, due to the large capacitance of the diode metallization. Hence, the fall time is given by the RC constant, estimated as RC = 270 ps, and the rise time is due to the charging of the diode capacitance via the transit and multiplication of carriers in the depletion layer. The latter varies between t 10-90 = 20 ps (at intermediate gains M < 500) and t 10-90 = 70 ps (at M = 3500). The corresponding RC-limited bandwidth is BW = 600 MHz, which yields a new absolute record in gainbandwidth product of GBW = 2.1 THz. The increase in rise time at high gains indicates the existence of a limit in the transit-time-limited gain-bandwidth product, GBW = 19 THz. The impulse response was modeled using a onedimensional deterministic model, which allowed a quantitative analysis of the data in terms of the average velocity of electrons and holes. The fitting of the data yielded a saturation of the electron and hole velocity of v e = 2.3 9 10 7 cm/s and v h = 1.0 9 10 7 cm/s at electric fields E > 1.5 kV/cm. The increase in rise time at high bias is consistent with the results of Monte Carlo simulations and can be partly explained by a reduction of the electron saturation velocity due to frequent impact ionization. Finally, the model was used to predict the bandwidth in diodes with shorter RC = 5 ps, giving BW = 16 GHz and BW = 21 GHz for x j = 4 lm and x j = 2 lm, respectively, for a gain of M = 100.

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Section: Introductionmentioning

confidence: 99%

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

Perrais

Derelle

Mollard

et al. 2009

Journal of Elec Materi

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“…HgCdTe based APD operates at low reverse bias to achieve large internal gain with low excess noise rather than III-V material based APD. Therefore, it is generally preferred linear mode operation to detect the weak signals 11,[30][31] .…”

Section: Ii-vi Materials Based Apdsmentioning

confidence: 99%

“…Therefore, hot carrier is unable to initiate the multiplication process. On the other hand, at high electric field, the hot carriers gain sufficient energy (~E th ) from the field faster than they lose it and make possible to the impact ionisation process [28][29][30][31] . In HgCdTe material, low phonon scattering also results in the high gain with low noise 27 .…”

Section: Ii-vi Materials Based Apdsmentioning

confidence: 99%

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

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“…Electron-avalanche APDs have also recently been explored using standard HgCdTe MWIR mesa diodes [14]. Gains up to a factor of 100 have been obtained with this approach.…”

Section: Avalanche Photodiodesmentioning

confidence: 99%

Third-generation sensors for night vision

Norton¹

2006

Opto-Electronics Review

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Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdle two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480×640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

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Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes

Cited by 18 publications

References 0 publications

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

Infrared Avalanche Photodiode Detectors

Third-generation sensors for night vision

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