Photon transport transistor

Zeghbroeck, B.J. Van; Harder, C.; Meier, Hektor; Walter, W.

doi:10.1109/iedm.1989.74340

Cited by 27 publications

(24 citation statements)

References 7 publications

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“…This weak rectification and photoresponse of the junction is likely linked to its n+/n as opposed to a true p/n nature. This suggests thermionic and tunneling electron currents can be present, as well, which can muddle the junction properties . Moreover, as apparent from the phase maps constructed using scanning transmission electron microscopy (STEM) of these materials, an alloyed interfacial region lies between the MoS 2 and the WS 2 regions (Figure S9).…”

mentioning

confidence: 99%

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Murthy¹,

Stanev²,

Cain³

et al. 2018

Nano Lett.

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Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.

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mentioning

confidence: 99%

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Murthy¹,

Stanev²,

Cain³

et al. 2018

Nano Lett.

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“…Figure 1 shows the energy band diagram for a typical semiconductor, where E F is the equilibrium Fermi energy of the system and E c and E v are respectively the conduction and valence energies of the semiconductor, µ e and µ h are the electron and hole chemical potentials, and E g is the gap energy. The Fermi energy indicates the energy required to add an electron (µ e = E F − E c < 0) or hole (µ h = E F − E v > 0) to the system, where as [1][2][3] …”

Section: Generalized Quantum Hydrodynamics Modelmentioning

confidence: 99%

Hydrodynamic theory of partially degenerate electron–hole fluids in semiconductors

Akbari-Moghanjoughi

Eliasson

2016

Phys. Scr.

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This version is available at https://strathprints.strath.ac.uk/57252/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N-and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.

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“…Van Zeghbroeck et.al have proposed the notion of "Photon transport transistor". 1 And in 1996, W. N. Cheung and P. J. Edwards have theoretically shown the characteristics of class of optocoupler amplifier. 2 On the other hand, as mentioned before, Okamoto who is one of the authors of this paper, also has found recently that the well-known common base transistor circuit in Fig.1 (a) can be realized by putting together an infrared light-emitting diode (IR-LED) and a Si photodiode (Si-PD) as shown in Fig.1…”

Section: Transistor By Photo-couplingmentioning

confidence: 99%

“…Further-more, we show the fact that the OCT can become a thyristor-like switching device under a certain condition. According to our literature search, there are only two similar researches 1,2 in the world other than ours. However no practical devices were developed in their works.…”

Section: Introductionmentioning

confidence: 99%

Novel Opt-coupling Transistor by LED and PD and its Application

Fujita¹,

Sato²,

Okamoto³

et al. 2014

JRNAL

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This paper proposes a novel transistor-like device by the optical coupling of LED (Light Emitting Diode) and Photodiode. The device that we call "OCT: Optical Coupling Transistor" shows an amplification function if the Photodiode current by photo electromotive force is feed backed into the LED, in the same way as the case of common emitter circuit of the conventional Bipolar Junction Transistor. In this paper, we present the amplification principle and its applications by OCT such as audio amplifier and operational amplifier.

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Photon transport transistor

Cited by 27 publications

References 7 publications

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Hydrodynamic theory of partially degenerate electron–hole fluids in semiconductors

Novel Opt-coupling Transistor by LED and PD and its Application

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