Photonic and Terahertz applications as the next gallium arsenide market driver

Abstract

Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently GaAs based HF ICs for mobile phones were among the most rapidly growing segments of GaAs market. However the GaAs market development trend is changing. Photonics and Terahertz engineering are becoming the new world GaAs market drivers. This means that the current emphasize of GaAs single crystal technologies will shift toward vertical directional crystallization of “optoelectronic quality” crystals. In the medium and longer terms the world GaAs wafer and epitaxial structure markets will continue growing. In the shorter term we all will have to take into account COVID epidemic consequences. Still the GaAs market is closely related to Smartphone market novelties. Quite probably after a long growth period the GaAs market will keep on shrinking for the second consecutive year: GaAs production may decline by 11–12% in 2020. Assuming that the epidemic will be somehow taken under control in 2021 the overall Smartphone production can probably be expected to grow starting from 2021. Currently the Russian market of semiconductor compounds for photonics and electronic components (GaAs etc.) is but moderate and in predictable terms is not expected to achieve a level that is required for the emergence of a competitive domestic manufacturer, even though all importation replacement programs are accomplished. Meanwhile there is understanding that developing an advanced electronic components industry in Russia requires larger production of source materials.

Defect engineering using microwave processing in SiC and GaAs

“…The primary process, which determines defect production under irradiation, is a displacement of the atoms from the sites of the lattice. But the energy of a photon with frequency 2.45 GHz is about 10 −5 eV only; the threshold displacement energies in GaAs and SiC are (8-28) eV [74] and (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35) eV [75], respectively. Therefore such a channel of microwave-induced modification of defect subsystem is unreal.…”

“…On the one hand, GaAs was invented and developed as a basic RF electronics material, but GaAs market development trends are changing now. The development of photonics and microwave engineering industry has attained a level suggesting that it will consume most of fabricated GaAs [24]. Therefore detailed knowledge of the properties of those defects under MW irradiation is crucial to the engineering of robust devices.…”

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

“…In our analysis, "max_ Depth" is varied across the values of [3][4][5][6][7][8][9][10], while "max_ Features" is considered in the range of [4][5][6][7][8]. This results in 40 distinct combinations of parameter settings.…”

“…The combination of wide bandgap and high mobility gives GaAs an advantage in high-frequency wireless communication (4G, 5G, and 6G), autonomous driving, as a radar transmitter, and in LIDAR systems [4][5][6][7][8]. An analysis of the GaAs and related equipment market up to 2025 shows that the application of GaAs single crystals will shift from mobile phones to opto-electronics, requiring more raw materials [9].…”