Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE

Bouzidi, M.; Benzarti, Z.; Halidou, I.; Chine, Z.; Bchetnia, A.; Jani, B. El

doi:10.1016/j.spmi.2015.04.030

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2016

2024

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 13 publications

(1 citation statement)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Exciton in GaN is extensively studied and well understood [7,8,[11][12][13][14][15][16][17][18]. We mark the energies of A-exciton transition A = 3.4751 eV and (free) B-exciton transition B = 3.4815 eV in Figure 4c, respectively [8].…”

Section: Resultsmentioning

confidence: 99%

Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

et al. 2021

View full text Add to dashboard Cite

An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices.

show abstract