Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Abstract

High quality n-ZnO films on commercial p-type 6H–SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO∕p-SiC heterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2×10−4A∕cm2 at −10V, a breakdown voltage greater than 20V, a forward turn on voltage of ∼5V, and a forward current of ∼2A∕cm2 at 8V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045A∕W at −7.5V reverse bias was observed for photon energies higher than 3.0eV.

Ultraviolet–Visible photo-response of p-Cu2O/n-ZnO heterojunction prepared on flexible (PET) substrate

“…These results show that the responsivity of our n-ZnO/p-Cu 2 O heterojunction at UV light is comparable to that reported by S. Alkis [24] (37 mA/W for n-ZnO/p-Si heterojunction and 45 mA/W for n-ZnO/p-SiC heterojunction reported by Y.I. Alivov [25]. In general, the output of p-Cu 2 O/n-ZnO photodetector can be further enhanced by the fabrication of low resistivity Cu 2 O film by doping process.…”

High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering

“…The photoresponsibility reached the maximum value of 0.09 A/W at 362 nm and its photo-responsibility decreased gradually to 0.004 A/W with increasing wavelength from 450 nm to 500 nm, indicating visible-blind, UV detectivity. Although the responsibility obtained was higher than the other type p-n junction UV detectors [26][27][28][29], its responsibility was slightly lower than those of the commercial GaN UV detectors ($0.1 A/W) [30]. …”

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

“…[1][2][3][4]. Among all the transparent conductive oxides, ZnO is a promising material for the fabrication of ultraviolet LEDs [5,6], detectors [7] and transparent conducting electrodes [8][9][10].…”