Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

Kim, H.Y.; Kim, J.H.; Kim, Y.J.; Chae, Keun Hwa; Whang, C. N.; Song, Ji Yeon; Im, Seongil

doi:10.1016/s0925-3467(01)00037-4

Cited by 70 publications

(28 citation statements)

References 7 publications

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“…3 we compare our estimate ðΦ p − Φ n Þ=2 ¼ −0.084 eV to the expectations for Fermi-level pinning at the charge neutrality level (CNL), for an idealized Schottky junction (electron affinity alignment), and to previously published results on metal/Si and ZnO/Si diodes [5,[32][33][34][35]. With the exception of Ca, AZO/Si, and metal/Si diodes all exhibit Φ n > Φ p , meaning that the Fermi level at the interface is in the lower half of the Si band gap.…”

Section: Resultssupporting

confidence: 59%

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Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes

Jaramillo¹,

Youssef²,

Akey³

et al. 2016

Phys. Rev. Applied

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We use electronic transport and atom-probe tomography to study ZnO∶Al=SiO 2 =Si Schottky diodes on lightly doped n-and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO∶Al at the junction is likely to be metallic even when the bulk of the ZnO∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.

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Section: Resultssupporting

confidence: 59%

“…2), but these trends are overwhelmed by the change in band alignment on going from ZnO to AZO as seen by comparing our results to those of Refs. [33][34][35] (Fig. 3).…”

Section: Discussionmentioning

confidence: 96%

Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes

Jaramillo¹,

Youssef²,

Akey³

et al. 2016

Phys. Rev. Applied

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“…Some authors have studied the various properties of n-ZnO on n-Si. Kim et al [9] have fabricated depositing n-ZnO films on n-and p-Si by rf sputtering method and they have investigated the rectifying characteristics of the diode by the current-voltage (I-V) measurement.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Aydoğan

Çınar

Asıl

et al. 2009

Journal of Alloys and Compounds

180

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“…As the In concentration is increased, the InGaN film is showing signs of relaxation which indirectly means increase in the dislocation density, reducing the crystallinity of the layer which is consistent with the observation of the variation of FWHM in rocking curve measurements. [76][77][78][79][80]. So far the most extensively studied material systems are ZnO/Si, In x Ga 1-x As, In x Ga 1-x Sb, Ge-Si, etc.…”

Section: Heterostructures Of Iii-nitride Semiconductors For Optical Amentioning

confidence: 99%

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.

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Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

Cited by 70 publications

References 7 publications

Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes

Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

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