2011
DOI: 10.1021/nl202239c
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Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

Abstract: For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al(2)O(3) passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.

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Cited by 35 publications
(42 citation statements)
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“…This means that we used B8 layers of WSe 2 and B9 layers of MoS 2 for a p-n diode. 28,29 In contrast, CYTOP encapsulation appeared to drastically improve the electrical performance of the device; although some amount of I-V hysteresis (B2 V) was still observed, the ideality factor was much reduced to Z = B2.5 which is 20 times smaller than that of the pristine device. 1a-f. Fig.…”
mentioning
confidence: 93%
“…This means that we used B8 layers of WSe 2 and B9 layers of MoS 2 for a p-n diode. 28,29 In contrast, CYTOP encapsulation appeared to drastically improve the electrical performance of the device; although some amount of I-V hysteresis (B2 V) was still observed, the ideality factor was much reduced to Z = B2.5 which is 20 times smaller than that of the pristine device. 1a-f. Fig.…”
mentioning
confidence: 93%
“…Figure b shows the I–V curves measured at RT in the range of −8 to +8 V performed 5 h after the fabrication as well as 10 d after the first measurements (under exposure to air) showing an excellent stability, i.e., no considerable deviations in device parameters were found, including rectifying behavior. Also, from Figure b it can be observed, that reverse breakdown does not occur, even when the applied bias voltage approaches a value of −8 V, which is higher compared to the reverse breakdown voltage of a single Si NW diode and comparable with other Schottky diodes based on single structures of ZnO NW/NB, GaN, and CdS NB . Furthermore, the reverse current does not show values higher than 0.3 nA for applied bias voltages up to −8 V (not shown).…”
Section: Resultsmentioning
confidence: 61%
“…All the oxide deposition processes were performed at room temperature (RT) to prevent any weaknesses of a glass substrate at high process temperatures, which are, for instance, impurity diffusion and high fabrication cost. Our transparent diode circuits are composed of a driving diode (DD) and a resistor diode (RD) which are serially but face‐to‐face connected to each other while the RD is a few times larger than DD in area 4, 5. As a result, we nicely demonstrate a dynamic rectification from an almost transparent diode circuit.…”
mentioning
confidence: 80%