Photovoltaic characteristics of thin films of Cu2SnS3

Kuku, Titilayo A.; Fakolujo, Olaosebikan A.

doi:10.1016/0165-1633(87)90019-0

Cited by 169 publications

(98 citation statements)

References 3 publications

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“…( the bulk density of SnS of 5.08 g/cm 3 is similar to that of CTS) [24,25]. The targets were pre-ablated by 15.000-18.000 pulses before measurement of the deposition rate in order to ensure a stable deposition.…”

Section: Characterizationmentioning

confidence: 99%

“…The deposition rates were measured with quartz crystal microbalances (QCM, Colnatec, Inc) and converted to film thickness assuming a bulk density of 5.02 g/cm 3 for both Cu 2 SnS 3 and SnS-rich CTS.…”

Section: Characterizationmentioning

confidence: 99%

“…According to the model CASINO [23], 99 % of the EDX signal for CTS derives from below 900 nm thickness and 90% from below 750 nm assuming a smooth surface and a bulk density of 5.02 g/cm 3 for Cu 2 SnS 3 [24].…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

“…Other p-type semiconductors with fewer elements are also available, including members of the ternary Cu-Sn-S system [3]. Among the Cu-Sn-S compounds, Cu 2 SnS 3 (CTS) has been suggested as potential solar cell absorber because it has an absorption coefficient comparable to CZTS and a band gap of 0.9-1.35 eV depending on the crystal structure [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

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Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

et al. 2016

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The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ=20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ=6 ns) was investigated. A comparative study of the two UV wavelengths shows that the film growth rate per pulse of CTS was three to four times lower with the 248 nm laser than the 355 nm laser. SnSrich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have sub-micron and micrometer size droplets, and their size and area density do not vary significantly from 248 to 355 nm deposition. Irradiation at low fluence resulted in a non-stoichiometric material transfer with significant Cu-deficiency in the as-deposited films. We discuss the transition from a non-stoichiometric material transfer at low fluence to a nearly stoichiometric ablation at high fluence based on a transition from a dominant evaporation regime to an ablation regime.

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Section: Characterizationmentioning

confidence: 99%

Section: Characterizationmentioning

confidence: 99%

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

et al. 2016

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“…Its band gap lies in the range of 0.93-1.51 eV and it is highly absorbing with an absorption coefficient of 10 4 -10 5 cm −1 . [2][3][4] It has a conductivity of 0.5-10 S/cm, a hole mobility of 1-80 cm 2 /V/s and a hole concentration of 10 18 cm −3 . 4,5 Till now CTS solar cells have reached an efficiency of 2.92%.…”

Section: Introductionmentioning

confidence: 99%

Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy

Dias

Krupanidhi

2015

AIP Advances

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The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be −1.1 ± 0.24 eV and the conduction band offset was 0.9 ± 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu2SnS3 heterojunction is useful for solar cell applications.

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Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

Houimi

Gezgi̇n

Mercimek

et al. 2022

Cryst. Res. Technol.

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Cu 2 SnS 3 (CTS) semiconductor material owns very interesting absorbing properties that allow it to be effectively utilized in many thin-film-based heterojunction solar cells. In this work, using the ball milling method, a mixture of pure elemental powders is used to synthesize CTS material. Homemade undoped and Li-doped target pellets are used to form CTS-doped and CTS-undoped thin films. The crystallinity investigation of synthesized targets and thin films confirms the formation of CTS tetragonal phase. Compositional, morphologic, and optic studies are also made to examine the effect of Li atom incorporation on different properties of CTS thin films. These CTS thin films are also incorporated into heterojunction solar cells (Al/n-Si/CTS/Ag and Al/n-Si/Li 0.03 CTS/Ag). In addition, J-V characteristics of both CTS and Li 0.03 CTS solar cells are demonstrated and discussed in details. The effect of CTS thin films' thickness on the performance is studied using Solar Cell Capacitance Simulator (SCAPS-1D) program. The results of the calculation are discussed in details and compared with the experimental results. An increase in efficiency is achieved in solar cells based on Li-doped CTS thin films, and it is discussed in detail along with SCAPS-1D simulation that is carried out depending on the thickness of CTS thin films.

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Photovoltaic characteristics of thin films of Cu2SnS3

Cited by 169 publications

References 3 publications

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

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Photovoltaic characteristics of thin films of Cu2SnS3

Cited by 169 publications

References 3 publications

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy

Effect of Li Doping on Cu2SnS3/n‐Si Heterojunction Solar Cells: Experiments and Simulation

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Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation