“…The presence of the series resistance R represents the sum of several structural resistances of the device (Soon et al, 2014;Boutana et al, 2017), including the parasitic series resistance (Mazhari, 2006) and dissipative effects (Cuce et al, 2017), the contact resistance of the metal base with the p semiconductor layer, the resistances of the p and n bodies, the contact resistance of the n layer with the top metal grid (Chin et al, 2015;Cibira and Koscová, 2014), and the resistance of the grid (Khan et al, 2013;Lasnier and Ang, 1990), and finally, the resistance of the materials which compose the module and causes a reduction on the power converted by this device (Ruschel et al, 2016).…”