Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors

Yakuphanoğlu, F.

doi:10.1016/j.sna.2007.10.023

Cited by 113 publications

(48 citation statements)

References 36 publications

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“…The interface state density of the diode was found to be 7.64 × 10 10 eV −1 cm −2 . The obtained D it value of the diode is higher than that of the diodes like p-Si/C60:MEH-PPV diode [13], Sn/pyronine-B/p-Si structures [43,25]. This suggests that the interface states properties of the conventional Si Schottky diodes can be controlled using various organic layers.…”

Section: Resultsmentioning

confidence: 83%

“…This behavior can result from series resistance and interface states, because the lower the interface density and the series resistance, the greater is the range over which ln I-V does in fact yield a straight line [27]. The rectification ratio (RR) which is the ratio of forward to reverse bias current at the same voltage was found to be 2.47 × 10 3 at ±4 V. The I-V characteristics of the organic and organic-on--inorganic structures can be analyzed by the following relation [9][10][11][12][13][14]:…”

Section: Resultsmentioning

confidence: 99%

“…Thus, the electrical parameters of the non-ideal diode can be obtained by the method proposed by Cheung and Cheung [31,32]. In this method, the barrier height (φ), ideality factor (n) and series resistance (R s ) values of organic-on-inorganic diodes [5,[10][11][12][13][14] can be determined by the following relations:…”

Section: Resultsmentioning

confidence: 99%

“…Organic semiconductor devices have attracted great attention due to its advantages over inorganic semiconductor which include large variety of molecular and crystal structure, low material cost, flexibility, low-temperature processing and large area device processing. Therefore, considerable interest of the researchers has been increased in the fabrication of organic devices by employing various organic materials as active layer [9][10][11][12][13][14]. Among organic materials, polymers have mechanical flexibility, and their thin films can be deposited by spin-casting, drop-casting, dip-coating and printing.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

2011

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The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by currentvoltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 × 10 10 cm −2 eV −1 . The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.

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Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

2011

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“…However, at low frequencies the total capacitance is equal to the sum of space-charge capacitance and interface capacitance, whereas the total capacitance arises mostly from the space-charge capacitance at higher frequencies. 27) Under forward bias, measurement of the depletion region capacitance is difficult as the diode is conducting and the capacitance is shunted by a large conductance. But, the capacitance can be easily measured as a function of the reverse bias.…”

Section: Resultsmentioning

confidence: 99%

Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

et al. 2013

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The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by currentvoltage (IV), capacitancevoltagefrequency (CVf ) and conductancevoltagefrequency (GVf ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (IV)/0.79 eV (CV) and 1.24, respectively. As well, the values of barrier heights, ideality factors and series resistance are estimated by Cheung and Norde methods are compared. Under forward bias conditions, ohmic and space charge limited conduction (SCLC) mechanisms are identified at low and higher voltages, respectively. The CV characteristics of the Yb/p-InP Schottky diode are also measured at different frequencies at room temperature. Further, the Cf and Gf measurements of the Yb/p-InP Schottky diode are performed at various biases. The interface state density N ss and relaxation time¸of the diode are estimated from the Cf and Gf measurements. The N ss and the¸show a decrease with bias from the top of the valence band toward the midgap. The profile of series resistance dependent on frequency and voltage confirms the presence of interface states in Yb/p-InP Schottky structure.

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Dilution‐Induced Self‐Assembly PEDOT:PSS Interlayer Enables Low‐Noise Near‐Infrared Organic Photodetectors for High‐Contrast Imaging

Xu,

Miao,

Eisner

et al. 2023

Advanced Optical Materials

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Poly(3,4‐ethylenedioxythiphene):poly(styrene sulfonate) (PEDOT:PSS) is widely used as hole transport layer in photodiodes due to its deep work function, flexibility, low cost, and commercialization potentials. However, organic photodetectors (OPDs) using commercial PEDOT:PSS (C‐PEDOT:PSS) interlayers usually suffer from high noise currents. Here, a simple dilution‐induced strategy is proposed for constructing an ultrathin self‐assembled PEDOD:PSS layer (D‐PEDOT:PSS). Dilution‐induced chain disentanglement leads to smaller grain sizes, which is beneficial to reduce defects and enhances selective charge transport. This enables the fabrication of near‐infrared PM6:Y6 organic photodetectors with three orders of magnitude lower ultra‐low dark current (<1.5×10−10 A cm−2) and one order of magnitude lower spectral‐noise density (2.1×10−14 A Hz−1/2) compared to devices using untreated PEDOT:PSS, at ‐0.1 V applied bias. With low dark current and enhanced responsivity, the shot‐noise‐limited detectivity increases by 35 times. An imaging system using OPDs as a sensing pixel has achieved high‐contrast images, demonstrating the imaging potential of the OPDs. The universality of this strategy to enhance the performance of OPDs is further demonstrated through three additional donor‐acceptor blends. This study presents a simple and effective strategy to reduce the noise current of PEDOT:PSS‐based OPDs and provides insights into the correlation between interfacial properties and the performance of OPDs.

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Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors

Cited by 113 publications

References 36 publications

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

Dilution‐Induced Self‐Assembly PEDOT:PSS Interlayer Enables Low‐Noise Near‐Infrared Organic Photodetectors for High‐Contrast Imaging

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