Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC:H Films from Trimethylsilane and Tetramethylsilane

Abstract

This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical vapor deposited (PECVD) -SiC:H silicon carbide films (with k-values less than 5) deposited using trimethylsilane, (CH 3 ) 3 SiH (3MS) and tetramethylsilane, (CH 3 ) 4 Si (4MS) organosilicate gases. It is found that the 4MS -SiC:H film contains a higher content of carbon and has a lower dielectric constant. Both of the 3MS and 4MS -SiC:H films are thermally stable at temperatures up to 500 C. However, degraded barrier property and moisture resistance were observed for the 4MS -SiC:H film; this is attributed to the porosity enrichment caused by the film's high carbon content. The 3MS -SiC:H film, which exhibits a superior Cu-barrier property, is a potential candidate for replacing the higher dielectric constant Si 3 N 4 film as a Cucap barrier and etching stop layer in the Cu damascene structure.

Novel multi-sided, microelectrode arrays for implantable neural applications

“…Compatible dielectric materials are limited primarily by the temperature of deposition. Researchers have reported successful combination of polymer and low-temperature inorganic dielectrics such as PECVD SiO 2 , Si 3 N 4 (Weaver et al 2002; Lewis et al 2004; Wuu et al 2005) or SiC (Chiang et al 2003; Cogan et al 2003) all can be deposited below 220°C.…”

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

“…As Ultra Large-Scale Integrated circuits (ULSIs) have been reduced to ultra deep submicron dimensions, signal propagation delay, cross talk, and power consumption have drastically increased due to the parasitic capacitance of intra-level interconnection. Copper (Cu) interconnection and low dielectric k ( k < 3.0) materials have been used from 0.13 um technology to reduce the RC delay time, interconnection resistance and interlayer capacitance [ 1 , 2 ]. However, the Cu interconnection has several disadvantages for application in process technology.…”

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD

“…The electrical impedance of CPE is expressed as (2) CPE is in fact classical capacitors in the case when n = 1. The determined capacitance of AC equivalent circuit at low bias voltages (V) is positive and slightly increases with bias as can be seen in Fig.…”

“…within construction of amorphous silicon solar cells. This alloy (in thin film form) shows to be promising as both, etch stop [1,2] and hard mask layer [3] to assist nanoelectronic patterning, and as low dielectric constant (known as low-k) interfacial dielectric material [4], diffusion barrier [S-7], and pore sealants [8]. Optoelectronic applications as another important area include the use of a-SiC photodiodes in optical communications [9], optical/image sensors [10] and LED's applications [11].…”