Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

Radovanovic, S.; Annema, Anne-Johan; Nauta, Bram

doi:10.1109/edssc.2003.1283491

Cited by 16 publications

(7 citation statements)

References 2 publications

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“…Each of the junctions has its own specific frequency behavior and size dependency; these will be reviewed briefly in the next subsections. More detailed analyses can be found in, e.g., [17]- [19] and [20]. A short summary and a benchmark of the various photodiodes are given in Section II-A4.…”

Section: A Intrinsic Photodiode Bandwidthmentioning

confidence: 99%

“…For the calculations, the photodiode surface is assumed to be reflective (i.e., the normal component of the gradient of the carrier density is zero) since the surface recombination process is slow compared to the frequencies of interest in this paper; the electron densities on the other three sides are assumed to be zero. It follows that the smallest dimension of the n-well (either the depth or the width) determines the bandwidth [12], [17]. For a 0.18-m CMOS process and nm, the 3-dB frequency is between 450 MHz (for wide n-wells) to over 900 MHz (for narrow n-wells).…”

Section: ) N-well/p-substrate Junctionmentioning

confidence: 99%

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A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

Radovanovic

Annema

Nauta

2005

IEEE J. Solid-State Circuits

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108

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Abstract-This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-m CMOS technology. A data rate of 3 Gb/s at BER 10 11 was achieved for = 850 nm with 25-W peak-peak optical power. This data rate is more than four times than that of current state-of-the-art optical detectors in standard CMOS reported so far. High-speed operation is achieved without reducing circuit responsivity by using an inherently robust analog equalizer that compensates (in gain and phase) for the photodiode roll-off over more than three decades. The presented solution is applicable to various photodiode structures, wavelengths, and CMOS generations.

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Section: A Intrinsic Photodiode Bandwidthmentioning

confidence: 99%

Section: ) N-well/p-substrate Junctionmentioning

confidence: 99%

A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

Radovanovic

Annema

Nauta

2005

IEEE J. Solid-State Circuits

Self Cite

108

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“…The photodiodes in standard CMOS silicon technologies suffer from slow substrate currents which degrade their temporal response, particularly for wavelengths above 600 nm [33].…”

Section: Intrinsic Photodetector Bandwidthmentioning

confidence: 99%

Streak camera in standard (Bi)CMOS (bipolar complementary metal-oxide-semiconductor) technology

Zlatanski¹,

Uhring²,

Normand³

et al. 2010

Meas. Sci. Technol.

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The conventional streak camera (CSC) is an optoelectronic instrument that captures the spatial distribution as a function of time of an ultra high-speed luminous phenomenon with picosecond temporal resolution and a typical spatial resolution of several tens of micrometers. This paper presents two tubeless streak camera architectures called MISC (matrix integrated streak camera) and VISC (vector integrated streak camera), which replicate the functionality of a CSC on a single CMOS chip. The MISC structure consists of a lens, which spreads the photon flux on the surface of a specific pixel array-based (Bi)CMOS sensor. The VISC architecture is based on a sensor featuring a single column of photodetectors, where each element is coupled to a front-end and a multi-sampling and storage unit. In this case the optical objective used in front of the sensor focuses the luminous event on the several tens of micrometers wide photosensitive column. For both architectures, the spatial resolution is linked to the size of the photodetector and the temporal resolution is determined by the bandwidths of the photodetectors and the signal conditioning electronics. The capture of a 6 ns full width at half maximum 532 nm laser pulse is reported for two generations of MISC and a first generation of VISC.

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“…(1) in [5]. For the p+ region, the hole current response is calculated using the nwell response in previously analyzed diode and changing diffusion coefficient and diffusion length as well the depth of the junction (D p1 !…”

Section: P+/nwell/p-substrate Photodiodementioning

confidence: 99%