Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor

Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

“…Hence, various high-k gate dielectric materials are being examined. ZrO 2 is believed to be a candidate because of the high relative dielectric constant of ~43 in the crystallized ZrO 2 and a high thermal stability at the interface with Si [5]. To extend the applicability of ZrO 2 , its deposition at low temperatures is required since the ZrO 2 coating might provide an excellent chemical stability for soft, non-heat tolerant materials.…”

Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

“…As a dielectric metal oxide, ZrO 2 has been of interest at first as a potential candidate for gate dielectrics in transistors [1][2][3][4][5]. ZrO 2 has found, in nanoelectronics, an application as a memory capacitor dielectric [6][7][8][9][10], and is investigated also as a potential dielectric for resistive random-access memories [11]. In addition, ZrO 2 has been considered as a host ion conductor material for solid oxide fuel cells [12,13] or encapsulation material layer for organic electronic devices [14].…”

“…Often, both precursors contain hydrogen and thus the residual hydrogen content could be diminished after substituting either one or both precursors by hydrogen-free ones. ZrO 2 films have been grown by several water-free ALD processes [21], such as in those based on (C 5 H 5 )Zr(N(CH 3 ) 2 ) 3 and oxygen plasma [7,22], Zr[N(CH 3 ) 2 ] 4 and O 3 [14], Zr[N(CH 3 )(C 2 H 5 )] 4 and O 3 [6,9,11,23], Cp 2 ZrCl 2 and O 3 [13,24], or Zr(NEtMe) 3 (guanNEtMe) and O 3 [25]. Regarding metal halide based and hydrogen-free ALD processes, depositions of Al 2 O 3 from AlCl 3 and O 3 [26], TiO 2 from TiCl 4 and O 3 [27], Ta 2 O 5 from TaCl 5 and O 3 [28], HfO 2 from HfCl 4 and O 3 [29], and HfO 2 from HfI 4 and O 2 [30] have been reported.…”

Effect of process temperature on the structural and electrical properties of atomic layer deposited ZrO2 films using tris(dimethylamino) cyclopentadienyl zirconium precursor

“…6(a)-6(c)]. 19,24,25 The film densities of as-grown and annealed ZrO 2 at various deposition temperatures are shown in Fig. 6(d)].…”

“…Especially, alkylamido-and cyclopentadienyl-based precursors, such as Zr(NEtMe) 4 and (MeCp) 2 Zr(OMe)Me, are commonly used. [18][19][20] As previously noted, Cp-Zr retains higher thermal stability than alkylamido-based precursors, but there are no reports that describe the correlation between the deposition temperature of Cp-Zr and the properties of the film. For this reason, a mixed alkylamido-cyclopentadienyl zirconium (Cp-Zr) precursor has been recently synthesized to achieve sufficient thermal stability with a high growth rate.…”