Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Abstract

The stability of tearing modes for current profiles satisfying the principle of profile consistency found by Coppi is investigated using a simple cylindrical model and compared with tokamak data. Saturated magnetic islands may occur, leading to flat regions superimposed on the cznonical profile, as recently observed in JET. However, depending on the values of the safety factor and internal inductance, the m/n = 2/1 and 3/2 modes may become simultaneously unstable,. giving rise to the possibility of disruption triggered by island overlap.

Series of Comparable Dinuclear Group 4 Neo-pentoxide Precursors for Production of pH Dependent Group 4 Nanoceramic Morphologies

“…Of these, group 4 nanoceramics have found widespread use in a diverse array of applications including (i) TiO 2 in photovoltaic and photocatalysis, (ii) ZrO 2 in solid oxide fuel cells and cosmetics, and (iii) HfO 2 in insulator, dielectric, and numerous other electroceramic uses. Reports for the production of TiO 2 nanomaterials (see ref and references therein) are abundant, with fewer routes available for production of ZrO 2 (ref − are some examples), and even less for HfO 2 nanoparticles syntheses. − The majority of these routes focus on the production of nanodots or wires. Recently we reported on the morphological variations noted for TiO 2 “nanoseeds” (i.e., preformed rutile nanoparticles used as nucleation growth sites) processed at high (10 M KOH) and low [(aq)HX; X = Cl, Br, I] pH under solution precipitation (SPPT) and solvothermal (SOLVO) conditions .…”

Electrical Characteristics of WSi2Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

“…A lattice fringe of WSi 2 nanocrystals appeared in high-resolution TEM images shown in the inset figures. However, the boundaries among the SiO 2 , HfO 2 , and Al 2 O 3 layers were not clearly observed because of the very thin HfO 2 interlayer of only 1 nm and the interface mixture effect between the HfO 2 and Al 2 O 3 layers induced by a chemical reaction after annealing at 900 C. 12,13) Moreover, Fig. 1(c) shows a selective-area-diffraction-pattern of the WSi 2 nanocrystals, which correspond to tetragonal WSi 2 crystals with (002) and ( 200) planes (JCPDS-81-2168).…”

Synthesis and Thermal Decomposition Mechanism Study of a Novel Iridium Precursor

“…Noble metal thin films have been extensively studied by both the traditional and microelectronics industries for potential applications such as anti-corrosion and antioxidation coating [1][2], or in the manufacture of bottom electrodes for high-density memory devices and ferroelectric capacitors [3][4][5]. Iridium is considered to be one of the best of these transition metal elements, as it possesses a high work function, a stable conductive oxide phase, IrO 2 , and excellent electrical properties [6].…”