2013 IEEE International Wireless Symposium (IWS) 2013
DOI: 10.1109/ieee-iws.2013.6616741
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Physical based Schottky barrier diode modeling for THz applications

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Cited by 4 publications
(2 citation statements)
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“…THz continuous wave (CW) sources are compact, but spectral scanning requires time. THz CW sources include ultrafast highspeed transistors [101], resonant tunneling diodes [102], quantum cascade lasers (QCLs) [103], backward wave oscillators [104], Schottky diodes [105], electro-optically active dendrimers [106], and optoelectronic devices [107]. THz CW wave detection can be realized with bolometers [108], pyroelectric detectors [109], Schottky diodes [110], and other optoelectronic detectors [111].…”
Section: Thz Methods and Thz Technologymentioning
confidence: 99%
“…THz continuous wave (CW) sources are compact, but spectral scanning requires time. THz CW sources include ultrafast highspeed transistors [101], resonant tunneling diodes [102], quantum cascade lasers (QCLs) [103], backward wave oscillators [104], Schottky diodes [105], electro-optically active dendrimers [106], and optoelectronic devices [107]. THz CW wave detection can be realized with bolometers [108], pyroelectric detectors [109], Schottky diodes [110], and other optoelectronic detectors [111].…”
Section: Thz Methods and Thz Technologymentioning
confidence: 99%
“…The temperature dependence of a pn-junction diode, however, is quite different from that of a Schottky barrier diode due to the different carrier transport mechanisms involved [3]. The physical based Schottky barrier diode model recently developed at the Technical University of Denmark and Goethe University of Frankfurt am Main [4] should in principle be able to predict the temperature behavior at cryogenic temperatures. The physical diode model, however, requires detailed knowledge about the technology used to fabricate the device.…”
Section: Introductionmentioning
confidence: 99%