Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures

Shrivastava, Mayank; Agrawal, Manish; Mahajan, Surabhi; Gossner, Harald; Schulz, T.; Sharma, Dinesh K.; Rao, V. Ramgopal

doi:10.1109/ted.2012.2188296

Cited by 100 publications

(42 citation statements)

References 25 publications

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“…Finally, thermal resistance at various interface was also considered in this simulation. Thermal conductivity values at narrow Fin, S/D region and Bulk Si are 0.25, 0.62, 1.5 W/K·cm, respectively [1]. Fig.…”

Section: Device Structure and Simulation Set-upmentioning

confidence: 89%

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Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device

Yoo¹,

Kim²,

Kang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From selfheating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Selfheating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

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Section: Device Structure and Simulation Set-upmentioning

confidence: 89%

“…Self-heating effect (SHE) arises from the joule heating by carrier-to-lattice scattering [1,2]. This effect can cause the performance degradation of operating devices.…”

Section: Introductionmentioning

confidence: 99%

Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device

Yoo¹,

Kim²,

Kang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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“…This is complemented by lower statistical variability due to a tolerance of lower channel doping compared to bulk transistors. Self-heating has been highlighted as one of the areas of concern for FinFETs because of the 3D geometry, the impact of the corresponding 3D heat flow through the fin to the substrate and the impact of the fin geometry on the local thermal conductivity [2][3][4][5][6][7][8]. These perceived self-heating problems could be exacerbated in This Manuscript received December 10, 2014; revised April 21, 2015.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore analyzing and modeling the self-heating in FinFETs and the influence on device performance has become one of the topics attracting a lot of recent interest [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

Wang

Brown

Nedjalkov

et al. 2015

IEEE Trans. Electron Devices

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Abstract-In this paper for the first time we study the impact of self-heating on the statistical variability of bulk and SOI FinFETs designed to meet the requirements of the 14/16nm technology node. The simulations are performed using the GSS 'atomistic' simulator GARAND using an enhanced electro-thermal model that takes into account the impact of the fin geometry on the thermal conductivity. In the simulations we have compared the statistical variability obtained from full-scale electro-thermal simulations with the variability at uniform room temperature and at the maximum or average temperatures obtained in the electro-thermal simulations. The combined effects of line edge roughness and metal gate granularity are taken into account. The distributions and the correlations between key figures of merit including the threshold voltage, on-current, subthreshold slope and leakage current are presented and analysed.

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“…Both, silicon-oninsulator (SOI) and bulk based devices can be found in FinFET technology. However, a great deal of progress is still needed to effectively describe and model their thermal characteristics, due to the low thermal coupling that takes place in devices with nano-scale dimensions [4][5][6], which is expected to increase because of the lower thermal conductivities of the films used in prototypes for future nodes described by the ITRS.…”

Section: Introductionmentioning

confidence: 99%