Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

Ren, Kailin; Liang, Yung C.; Huang, Chih-Fang

doi:10.1109/wipda.2016.7799960

Cited by 12 publications

(5 citation statements)

References 21 publications

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“…Reference devices with planar gates, co-fabricated on the same chip, presented normally-on behavior with V TH = -4.8 V. A significant shift in V TH of about 4 V was achieved by patterning 700 nm-long nanowires in the gate region with w of 40 nm. As the fin width was reduced, V TH further approached 0 V, which is mainly due to strain relaxation of the AlGaN/GaN in addition to sidewalls depletion [20], [22], [23]. However, this is not enough to achieve fully E-mode operation, even for a nanowire width down to 15 nm.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Nela

Zhu

et al. 2019

IEEE Electron Device Lett.

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In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (VTH) over 0.6 V at 1 μA/mm, large current density (IDS) up to 590 mA/mm, low specific on resistance (RON,SP) of 1.33 mΩ•cm 2 , high ON/OFF ratio over 10 10 and large breakdown voltage (VBR) of 1080 V at 1 μA/mm with grounded substrate. The excellent high power FOM of 877 MW/cm 2 reveals the potential of our approach to obtain E-mode operation, while maintaining exceptional on-state performance and high VBR.

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Section: Resultsmentioning

confidence: 99%

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Nela

Zhu

et al. 2019

IEEE Electron Device Lett.

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“…The transfer characteristics of the NC-HEMTs and c-HEMTs with and without PGA were measured at V D = 4 V, as shown in figure 3(a). With the decrease in the channel widths, a positive shifting of the threshold voltage was observed in the NC-HEMTs [42,43]. The V TH was defined as the gate bias intercept point of the linear extrapolation of I D at peak transconductance (G MMAX ) [44].…”

Section: Resultsmentioning

confidence: 99%

DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation

Mazumder

Pan

et al. 2021

Semicond. Sci. Technol.

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In this work, the effects of a post-gate annealing (PGA) treatment on the electrical performance of AlGaN/AlN/GaN nanochannel high electron mobility transistors (NC-HEMTs) were analyzed, with various channel widths of 200, 400, 600, and 800 nm for a constant fill factor of 0.45. A systematic improvement in the DC parameters was observed in the NC-HEMTs after PGA treatment at 400 • C for 10 min. Secondary ion mass spectroscopy was performed on the 300 • C, 400 • C, and 500 • C for 10 min annealed and as-deposited NC-HEMT to optimize the PGA conditions. It was also verified that annealing at higher temperatures (>400 • C) can cause the diffusion of the gate metal (Ni/Au) into the AlGaN/AlN/GaN active layer, which subsequently degrades the device performance. The removal of shallow traps after the PGA treatment, which were created by ICP dry etching, improved the Schottky barrier height (∅ B ) from 0.42 eV to 1.40 eV and resulted in a significant reduction in the reverse gate leakage current (I G ) of approximately more than three orders of magnitude in the NC-HEMT with a channel width of 200 nm. The reduction in the channel resistance after the PGA treatment, correspondingly improved the drift velocity, resulting in a marked improvement in the maximum transconductance (G MMAX ) of 34% and considerable incremental increases in the maximum drain current (I DMAX ). The NC-HEMT (W NC = 200 nm) with PGA treatment exhibited decent performance, with an I G of 9 × 10 −9 A mm −1 , an I DMAX of 470 mA mm −1 , a G MMAX of 140 mS mm −1 , and an ON/OFF ratio (I ON /I OFF ) of approximately 1.1 × 10 7 along with improved gate controllability, i.e. lowering of the subthreshold swing to 69 mV dec −1 .

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“…Whereas, in FinFETs, the role of side gates is significant in determining the overall characteristics of the device and thus, cannot be ignored. On the other hand, models reported in the literature [13][14][15] for AlGaN/GaN FinFETs deal with the devices having oxide based insulated gate and, to the best of our knowledge, there is no reported model which deals with metal Schottky barrier gate FinFETs in the absence of oxide layer. For this purpose, three dimensional (3D) Poisson equation is solved for FinFET changed geometry to get the potential across the 2DEG plane, which controls n s concentration and hence the channel current.…”

Section: Introductionmentioning

confidence: 98%

A modified analytical model for AlGaN/GaN FinFETs I – V characteristics

Ahmed

Memon

2020

Semicond. Sci. Technol.

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In this paper, a high electron mobility transistor's (HEMT) analytical model, which is based on the vertical operation of Schottky barrier gate, has been modified for the I−V characteristics of rectangular shaped AlGaN/GaN FinFETs having three-sided Schottky barrier gate operation. The proposed model includes the effect of the tri-gate structure on sheet carrier concentration (n s ) of the device. A three dimensional Poisson equation is solved keeping in view, the device geometry and applied potentials, to get the effect of the side gates on n s . It is demonstrated that n s of a FinFET depletes relatively faster than its HEMT counterpart due to the extra fields caused by the side gates. Knowing bias dependent n s , FinFET I−V expressions are developed and tested on AlGaN/GaN FinFETs of varying gate lengths (L g =0.4 -1.0 μm) for the above threshold regime. A good agreement between the experimental and modeled characteristics is observed, which demonstrates the validity of the proposed model in predicting the DC characteristics of tri-gate AlGaN/GaN FinFETs.

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Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

Cited by 12 publications

References 21 publications

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation

A modified analytical model for AlGaN/GaN FinFETs I – V characteristics

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