Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling

Ouwerling, G.J.L.

doi:10.1016/0038-1101(90)90190-p

Cited by 28 publications

(9 citation statements)

References 24 publications

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“…The use of the inverse modeling technique based on MOS capacitor physics to extract the dopant profile [9], [10] has not been successful to date due to the fact that many physical effects influencing the experimental SCM data are not accounted for in the associated forward modeling. The presence of a significant amount of interface traps at the oxide-silicon interface and degradation of surface carrier mobility are two such effects, their influence on dopant profile extraction have not been previously investigated.…”

Section: T He International Technology Roadmap For Semiconductors Idementioning

confidence: 99%

Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement

Yao

Yeow

Chim

et al. 2004

IEEE Trans. Electron Devices

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Abstract-Although scanning capacitance microscopy (SCM) is based on the MOS capacitance theory, the measurement frequency is 915-MHz instead of 100 kHz to 1 MHz in conventional MOS capacitance-voltage measurement. At this high frequency, the reactance of the probe tip-to-substrate capacitance can become smaller than the series resistance of the substrate inversion layer, particularly when the surface mobility is degraded. The response of the oxide-silicon interface traps to SCM measurement is also different due to the use of a 10-kHz signal to determine dC dV. In this paper, we compare experimental and simulation data to demonstrate the effects of interface traps and surface mobility degradation on SCM measurement. Implications on the treatment of SCM data for accurate dopant profile extraction are also presented.

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Section: T He International Technology Roadmap For Semiconductors Idementioning

confidence: 99%

Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement

Yao

Yeow

Chim

et al. 2004

IEEE Trans. Electron Devices

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“…Even though smooth doping profile is of less interest in many literature on semiconductor modeling, reconstruction of those profiles can indeed help us to test the validity of the reconstruction algorithms. The reconstructions are done by parameterizing the unknown profile by Fourier coefficients as in (47) and only reconstructing the first 15 Â 15 Fourier modes (M x = M y = 15 in (47)). We performed reconstructions on two profiles.…”

Section: Recovering Smooth Doping Profilesmentioning

confidence: 99%

“…The aim of parameter extraction is to recover material parameters of devices from measurement of device characteristics, such as the voltage-to-current (I-V) data and the voltage-to-capacitance (C-V) data. The parameters that are of interests are mainly the doping profile [19,24,34,47] and the carrier mobilities [10,51,56], but there are also significant interests in other material parameters such as thermal and electrical conductivities [30,31].…”

Section: Introductionmentioning

confidence: 99%

“…The most widely used technique in the semiconductor community is the so-called C-V technique, proposed initially by Kennedy, Murley and Kelinfelder in [36,37] and have been extensively studied since then [24,34,47,48,58,[61][62][63]66,67]. The underline mathematical model for the C-V technique is a one-dimensional drift-diffusion-Poisson system; see (6) below for a simplified multi-dimensional version.…”

Section: Introductionmentioning

confidence: 99%

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Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

Cheng

Gamba

Ren

2011

Journal of Computational Physics

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“…Although SCM has been able to produce contrast images for p-n junction delineation, dopant profile extraction across a p-n junction from SCM data is still a very challenging task [4,5,6,7]. Due to the fact that many physical effects influencing the experimental SCM data are not well understood and hence not accounted for in the associated forward modeling, the use of the inverse modeling technique based on MOS capacitor physics to extract the dopant profile [8,9] has not been successful to date.…”

Section: Introductionmentioning

confidence: 99%

Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV

Yao

Yan²,

Wong³

et al.

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.

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Scanning capacitance microscopy (SCM) has proven to be successful for junction delineation. However quantitative dopant profile extraction by SCM still remains a difficult challenge, due to limited understanding of relevant physics especially at p-n junction, as well as difficulties to accurately quantify all parameters in modeling. In this paper we present a new procedure, the use of peak dC/dV at every spatial point, for dopant profile extraction. The advantage of such a technique is twofold. First it eliminates problems encountered using a fixed dc bias such as contrast reversal. Second, it also excludes the need to model interface traps. This is because the peak dC/dV value is independent of the presence of interface traps, as demonstrated in our experimental results. Furthermore, based on our understanding of the influence of mobility degradation at p-n junction, we propose that low surface mobility model should be used in simulation so that only the accumulation-to-depletion dC/dV is extracted.

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Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling

Cited by 28 publications

References 24 publications

Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement

Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement

Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV

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