2009
DOI: 10.1016/j.solmat.2009.04.019
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Physical understanding of the behavior of silver thick-film contacts on n-type silicon under annealing conditions

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Cited by 37 publications
(17 citation statements)
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“…This glass layer redistribution around the crystallites, without presenting direct current paths -free of interfacial glass layer-, most probably causes the measured series resistance increase. A similar correlation of the SEM measured interfacial glass layer thickness with the increase of series resistance and contact resistance has been also observed in other studies [3], [22], [23]. One possible solution would be to tailor the composition of the paste to avoid the glass layer growth for supporting low temperature annealing steps below the firing temperature.…”
Section: Scanning Electron Microscopy After Standard and Extended supporting
confidence: 84%
“…This glass layer redistribution around the crystallites, without presenting direct current paths -free of interfacial glass layer-, most probably causes the measured series resistance increase. A similar correlation of the SEM measured interfacial glass layer thickness with the increase of series resistance and contact resistance has been also observed in other studies [3], [22], [23]. One possible solution would be to tailor the composition of the paste to avoid the glass layer growth for supporting low temperature annealing steps below the firing temperature.…”
Section: Scanning Electron Microscopy After Standard and Extended supporting
confidence: 84%
“…In many studies, the possibilities of current transport have three methods: direct interconnection at isolated spots between Ag crystallites and the Ag bulk, tunneling through ultra-thin glass regions, and conduction through the glass layer by tunneling through the discontinuous metal crystals in the glass layer. Therefore, the glass frit in the Ag paste plays a key role in contact formation and influences firing condition to optimize quality of contact [2][3][4] …”
Section: Intorductionmentioning
confidence: 99%
“…For 1 Â 10 17 cm À 3 oN D o1 Â 10 19 cm À 3 , it is a combination of TE and FE, defined as the thermionic field emission (TFE). In the recent research works [6][7][8][9], silver crystallites were observed in the interface layer between the silicon emitter and the silver fingers. It is believed that silver crystallites played an important role in the contact formation and current transport.…”
Section: Introductionmentioning
confidence: 99%