Physics-Based 2-D Analytical Model for Field-Plate Engineering of AlGaN/GaN Power HFET

Self Cite

In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps' ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap's detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model. Index Terms-GaN MOS-HEMT, short-channel effect threshold voltage, acceptor-type trap.

Section: Short-channel Effectmentioning

confidence: 99%

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

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“…(16). Since Region I and Region III are close to the edge of the gate and drain electrodes, a is a correction factor to take the edge effect into account [10]. Here, the parameters used in the modeling process are shown in the APPENDIX, including k1, k2, β1, β2, β3, V1, V2 and V3.…”

Section: Si3n4mentioning

confidence: 99%

“…By this approach, modeling complex device structures are challengeable and simulation results need to be obtained before modeling. After that, by solving Poisson equations, W. Mao and T. Chen proposed analytical models for AlGaN/GaN HEMTs operating in partial depletion mode [9], [10]. The potential and E-Field distributions can be obtained with a combination of two hypotheses introduced as boundary conditions at the passivation layer surface.…”

Section: Introductionmentioning

confidence: 99%

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Liu

Guo

Zhang

et al. 2020

The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate's edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates' lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained. Index Terms-AlGaN/GaN HEMTs, gate and drain field plates, analytical model, breakdown voltage.

“…The field plate technique, as shown in Fig. 1(a), is employed to curb the excessive electric field peaks at electrodes [7]- [10]. As demonstrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

Liu

Zhang

Yao

et al. 2022

The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution between the gate and drain electrodes. By applying the Gaussian box method, an effective designing guidance for the structure optimization of the AlGaN/GaN HEMT with adaptive-width drift region pillars (AWD-HEMT) is obtained. The fabricated AWD-HEMT demonstrated a significant improvement in breakdown performance. The Baliga's figure of merit (BFOM) of AWD-HEMT improved 65.3% compared with the conventional HEMT, without introducing complicated processes. In addition, the mechanism of the AWD-HEMT is explored by numerical methods. The simulations indicate that a more uniform electric field distribution at AlGaN/GaN interfaces could be obtained, and the increased varying rate of the adaptive-width drift region (AWD) pillars results in a more obvious electric field modulation effect.