Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias

Bughio, Ahsin Murtaza; Guerrieri, Simona Donati; Bonani, Fabrizio; Ghione, Giovanni

doi:10.1109/inmmic.2017.7927300

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…FinFET is demonstrated to be more advantages than MOSFET with additional gate control input, attenuated drain induced barrier lowering (DIBL), improved sub threshold swing and immunity to short channel effects [2]. FinFET based analog circuits are designed and demonstrated to be advantageous over MOSFETs [3]. Two stage amplifiers are designed using FinFET and is observed to be having advantageous over MOSFET based op-amp [4].…”

Section: Introductionmentioning

confidence: 99%

Operational transconductance amplifier-based comparator for high frequency applications using 22 nm FinFET technology

Vasudeva¹,

Venkataramanaiah

2022

IJECE

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<p><span>Fin field-effect transistor (FinFET) based analog circuits are gaining importance over metal oxide semiconductor field effect transistor (MOSFET) based circuits with stability and high frequency operations. Comparator that forms the sub block of most of the analog circuits is designed using operational transconductance amplifier (OTA). The OTA is designed using new design procedures and the comparator circuit is designed integrating the sub circuits with OTA. The building blocks of the comparator design such as input level shifter, differential pair with cascode stage and class AB amplifier for output swing are designed and integrated. Folded cascode circuit is used in the feedback path to maintain the common mode input value to a constant, so that the differential pair amplifies the differential signal. The gain of the comparator is achieved to be greater than 100 dB, with phase margin of 65°, common mode rejection ratio (CMRR) of above 70 dB and output swing from rail to rail. The circuit provides unity gain bandwidth of 5 GHz and is suitable for high sampling rate data converter circuits.</span></p>

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Section: Introductionmentioning

confidence: 99%

Operational transconductance amplifier-based comparator for high frequency applications using 22 nm FinFET technology

Vasudeva¹,

Venkataramanaiah

2022

IJECE

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“…Despite the technology optimization, FinFETs are still affected by a significant amount of variability resulting from physical parameter variations, such as geometrical dimensions, doping level or gate workfunction. Modelling such variations is very important for FinFET-based digital [12] and, even more, analog circuit design [7], [10], [13], [14]. In fact, any new circuit topology, e.g.…”

Section: Introductionmentioning

confidence: 99%

Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

Bughio

Guerrieri

Bonani

et al. 2017

IEEE Electron Device Lett.

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In this paper we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variability analysis is addressed by means of the recently developed physicsbased sensitivity analysis of AC parameters through Green's functions [1], [2]. To demonstrate the technique, we address the analysis of a FinFET mixer exploiting an innovative Independent Gates topology, showing that a careful design allows to maximize the mixer conversion gain while minimizing its variability vs. several physical parameters, such as the gate length, oxide thickness and fin width.

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Variability of FinFET AC parameters: A physics‐based insight

Bughio

Guerrieri

Bonani

et al. 2017

Int J Numerical Modelling

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This paper presents a fully physics‐based variability analysis of single‐fin double‐gate Metal Oxide Semiconductor FET (MOSFET) AC parameters, without resorting to any approximated quasi‐static analysis based on the variations of the DC drain current or charge. Variations of the AC parameters have been investigated as a function of all the relevant geometrical and physical parameters, with emphasis on the ones affecting the device parasitics, especially important for high‐frequency analog applications. A numerically efficient Green's function technique is applied to reduce the simulation time to a few percent of the time required for standard Monte Carlo–based variability analysis. The Green's function approach especially allows for a deep insight into the so‐called local variability source, highlighting the regions of the device where physical variations most significantly affect the output AC performances and opening the way for possible structure optimization. Although presently implemented in a 2D in‐house software, the technique can be easily exported to standard 3D Technology Computer‐Aided Design (TCAD) tools, eg, for tri‐gate FinFET analysis.

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Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias

Cited by 4 publications

References 14 publications

Operational transconductance amplifier-based comparator for high frequency applications using 22 nm FinFET technology

Operational transconductance amplifier-based comparator for high frequency applications using 22 nm FinFET technology

Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

Variability of FinFET AC parameters: A physics‐based insight

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