Piezoelectric characterization of Sc<sub>0.26</sub>Al<sub>0.74</sub>N layers on Si (001) substrates

Lozano, Miguel Sinusía; Pérez-Campos, A; Reusch, Markus; Kirste, Lutz; Fuchs, Th.; Žukauskaitė, Agnė; Chen, Z; Iriarte, G.F.

doi:10.1088/2053-1591/aab232

Cited by 12 publications

(13 citation statements)

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“…Based on ab initio predictions, the benefit of additional alloying elements into pure AlN to achieve increased piezoelectric properties were proposed by different research groups in the last decades. Ternary systems based on scandium [14][15][16] or chromium, [17] as well as quaternary systems applying alloying elements such as zirconium, hafnium, [18] or niobium [19] in combination with, for example, magnesium, have been extensively studied. The highest d 33 of 27.6 pC N −1 in an AlN-based material system as of yet has been achieved experimentally by alloying AlN with 43 at% scandium.…”

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confidence: 99%

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Pandit

Schneider

Berger

et al. 2022

Adv Elect Materials

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Alloying transition metals into aluminum nitride (AlN) has surged over the past decade to increase the piezoelectric performance of AlN for microelectromechanical systems (MEMS) applications. So far, the highest piezoelectric coefficients have been achieved by alloying scandium into AlN. But, most recently published studies have theoretically predicted by ab‐initio calculations that yttrium can also be a promising and less expensive alternative to scandium. This paper focuses on the impact of an AlN seed layer on the growth and piezoelectric properties of sputter‐deposited, polycrystalline Y0.15Al0.85N thin films on a silicon substrate. For the first time, the increase in piezoelectric performance of YxAl1−xN (x = 15%) thin films with a d33 of ≈7.85 pC N−1 due to this seed layer approach is presented, thus reaching in good agreement theoretical predictions. Furthermore, for the first time, the crystalline stability of Y0.15Al0.85N layers in a pure oxygen environment up to 1200 °C is reported, demonstrating a high oxygen resistance up to 800 °C even in this harsh environment. Detailed thin film analysis is done with various techniques such as X‐ray diffraction, atomic force microscopy, nano‐indentation, and high‐resolution transmission electron microscopy and correlated with piezoelectric coefficient measurements.

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confidence: 99%

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Pandit

Schneider

Berger

et al. 2022

Adv Elect Materials

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“…This high value of d 33 is achieved by ensuring oxygen–free Y x Al 1‐ x N layers and by minimizing the rocking curve FWHM using an AlN seed layer approach and careful deposition parameter optimization. Minimizing the FWHM is essential given that AlN [ 34 ] and ScAlN [ 35 ] have previously shown a strong correlation of improved d 33 with a lower FWHM. All measured d 33 values perfectly match to the theoretical predictions by Manna et al and Mayrhofer et al while providing strong experimental evidence against the theoretical predictions by Tholander et al when comparing the interpolation of the value at 50% yttrium concentration and experimental data.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

Pandit,

Schneider,

Schwarz

et al. 2023

Adv Eng Mater

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Alloying rare earth elements into aluminum nitride (AlN) thin films to increase the piezoelectric response has gained a lot of attention in the past few years. Many rare earth elements were investigated in which scandium alloying has resulted in the highest piezoelectric response for AlN. At the same time, researchers have also theoretically explored yttrium alloying as a feasible and economical alternative to scandium. In this paper, we demonstrate for the first time experimentally the increase of the piezoelectric response of sputter‐deposited YxAl1–xN thin films as a function of increasing yttrium concentration as predicted by density functional theory calculations. By using differently manufactured targets, YxAl1–xN thin films with four different yttrium alloying concentrations (9, 12, 15 and 20 at%.) are synthesized. Detailed thin film analysis is carried out and the highest value of d 33 measured is 12 pC/N for Y0.2Al0.8N, which is a 250 % increase compared to pure AlN. Even more, the Young’s modulus decreases with increasing yttrium concentration in excellent agreement with theoretical predictions. Finally, Y0.15Al0.85N and Y0.2Al0.8N layers show high crystalline stability in pure oxygen environment up to 800˚C, demonstrating high oxidation resistance even under harsh environmental conditions.This article is protected by copyright. All rights reserved.

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“…The Sc 0.26 Al 0.74 N thin films were synthesized with a discharge power of 700 W, a process pressure of 0.53 Pa, and a target to substrate distance set to 45 mm. Further information about the Sc 0.26 Al 0.74 N thin‐film synthesis can be found in studies by Sinusia Lozano et al The thin‐film composition of Sc 0.26 Al 0.74 N was analyzed by means of Rutherford backscattering spectrometry (RBS) at a backscattering angle of 160°.…”

Section: Methodsmentioning

confidence: 99%

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

Lozano

Chen

Williams

et al. 2019

Physica Status Solidi (a)

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Since the commercialization of surface acoustic wave (SAW) devices, the technology is steadily increasing the device performances without compromising their power handling, size and price. Herein, one‐port SAW resonators are fabricated on scandium aluminum nitride (Sc0.26Al0.74N)/polycrystalline diamond heterostructures. SAW propagation properties are studied using three different piezoelectric thin‐film thicknesses within the heterostructure. The Rayleigh and Sezawa resonance frequencies are above 1.5 and 2.5 GHz, respectively, achieving Sezawa mode reflection coefficients below −50 dB. The polycrystalline diamond substrate is synthesized by microwave plasma chemical vapor deposition (MPCVD) on top of a 500 μm‐thick Si (001) substrate. The Sc0.26Al0.74N thin films are synthesized by reactive sputtering at nominally room temperature. The thin film's composition is analyzed by Rutherford backscattering spectrometry (RBS). The full width at half maximum (FWHM) of the X‐ray diffraction (XRD) ω scans below 3° indicates that the synthesized Sc0.26Al0.74N thin films are highly c‐axis oriented. The electromechanical coupling coefficient, quality factor, and dielectric loss parameters are computed by curve fitting the device electrical measurements to the simulation results of a modified Butterworth Van Dyke (mBVD) model implemented in the advance design system (ADS) tool.

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Piezoelectric characterization of Sc_0.26Al_0.74N layers on Si (001) substrates

Cited by 12 publications

References 44 publications

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

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Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates

Cited by 12 publications

References 44 publications

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of YxAl1−xN (x = 15%) Thin Films

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of YxAl1−xN (x = 15%) Thin Films

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (YxAl1‐xN) Thin Films

Giant Reflection Coefficient on Sc0.26Al0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

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Piezoelectric characterization of Sc_0.26Al_0.74N layers on Si (001) substrates

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of Y_xAl₁₋_xN (x = 15%) Thin Films

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators