Piezoelectric PZT thick films on LaNiO₃buffered stainless steel foils for flexible device applications

Abstract

In this paper, we report on 4.5µm piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO3 (LNO) buffer layers using a ceramic powder/sol–gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm−1 with remanent polarization and coercive electric field values of 27µC cm−2 and 85 kV cm−1, respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 × 10−5 Acm−2 over the range of 0 to ±150V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.

Ferroelectric thin films with liquid crystal for gradient index applications

“…1(b)], a frequency commonly used for switching liquid crystal. The measured dielectric constant is comparable to that found in other studies where PZT was deposited on metal foils using sol-gel processing and rf-sputtering [19][20][21][22].…”