Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

Prume, K.; Muralt, Paul; Calame, F.; Schmitz-Kempen, Thorsten; Tiedke, S.

doi:10.1109/tuffc.2007.206

Cited by 81 publications

(54 citation statements)

References 19 publications

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“…For device A-CA42 the contact problem is not as manifest judged from the values of tan δ.From the fitted d 31 value we can calculate e 31,f using Eq. 16 resulting in e 31,f =−11.86 C/m 2 , which agrees well with e 31,f values obtained using four point bending measurements (AixACCT TF2000 analyzer [10]) on the same batch of sol-gel thin films (−14 C/m 2 to −15 C/m 2 ) [14]. It can be seen that the length of the cantilevers in both cases is 95-97 μm longer than the design length, which agrees reasonably well with the observed undercut resulting from the wet etch.…”

Section: Fitting Actuated Cantileverssupporting

confidence: 87%

A simple and powerful analytical model for MEMS piezoelectric multimorphs

et al. 2007

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We have developed an analytical model for use in design and modelling of piezoelectric MEMS devices. The model allows for incorporation of any number of device material layers in a multimorph structure including piezoelectric materials. The resulting lumped circuit model fully incorporates the electro-mechanical coupling effects in the piezoelectric layers as well as electrical or mechanical loading of the device structure. Since the model is analytic, and only requires the specification of well-defined material properties, it allows for fast and interactive modelling of a multitude of MEMS device structures incorporating piezoelectric materials. We will demonstrate the capability of the model by presenting results from fitting the model to impedance measurements performed on cantilever structures. This allows for extraction of device and material parameters that are difficult to obtain by other means, such as the piezoelectric coefficient and the mechanical quality factor.

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Section: Fitting Actuated Cantileverssupporting

confidence: 87%

A simple and powerful analytical model for MEMS piezoelectric multimorphs

et al. 2007

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“…actuator mode), similar to the ones for PPE structures [20,21]. The converse effect can be measured as large signal response, as opposed to the usual methods for the direct effect that measure a small signal response [22][23][24]. Large signal measurements are more relevant for actuators requiring large strokes.…”

Section: P Ementioning

confidence: 99%

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Chidambaram

Balma

Nigon

et al. 2015

J. Micromech. Microeng.

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The use of interdigitated electrodes (IDEs) in conjunction with ferroelectric thin films shows many attractive features for piezoelectric MEMS applications. In this work, growth of {1 0 0}-textured lead zirconate titanate (PZT) thin films was achieved on insulating MgO buffered, oxidized silicon substrates. IDEs were fabricated by lift-off techniques and cantilevers were formed by dicing. The deflection upon application of a sweeping voltage was measured as large signal response in parallel to the ferroelectric polarization (PV loop). Likewise, the small signal piezoelectric response was measured in parallel to the capacitance-voltage (CV) measurement. In this way, a complete picture of the ferroelectric–piezoelectric element was obtained. From the deflection, the in-plane piezoelectric stress in the PZT thin film was derived and, from this, the effective piezoelectric coefficients. For the latter, two types were defined: an engineering type corresponding to the average value along the IDE, which can directly be compared to coefficient of a parallel plate electrode (PPE) capacitor and a second one that approximately yields the idealized coefficient governing between the electrode fingers. The IDE structures were experimentally compared with PPE structures of identical film thickness. The resulting coefficients were of opposite sign, as expected. In spite of a much better polarization loop, the IDE device showed a lower average piezoelectric stress. The estimated peak value between the fingers was about the same as in the PPE device, corresponding to about 20 C m−2. Nevertheless, the result is very promising for cases where compressive piezoelectric stresses are required and for preventing cracking due to large piezoelectric tensile stresses in PPE systems.

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“…The average relative permittivity is found to be 1130 with a standard deviation of 4.5% [4]. The e 31,f is measured from 0.1 to 10 Hz, and varies from -15.1 to -14.1 C/m 2 [3]. A review by TrolierMcKinstry and Muralt [5] reported the overall accepted value of e 31,f for PZT thin films as -12 C/m2.…”

Section: Film Characterizationmentioning

confidence: 96%

“…Films and devices are characterized electrically by measuring the electrical permittivity, and the transversal piezoelectric charge coefficient e 31,f is measured in a 4-point bending measurement setup [3]. The average relative permittivity is found to be 1130 with a standard deviation of 4.5% [4].…”

Section: Film Characterizationmentioning

confidence: 99%

Qualification and Applications of a Piezoelectric MEMS Process

Poppe

Østbø

Booij

et al. 2007

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

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An industrializable process for manufacturing of piezoelectric ultrasound transducer elements is demonstrated. The PZT film is deposited by chemical solution deposition on SOI wafers, and standard MEMS processes are utilized to make cantilevers, bridges and membranes. The PZT film of ~50% of the devices exposed to thermal aging were found to fail at 85°C -85%RH (relative humidity), while a real-life test of 8·10 10 cycles at resonance only gives a slight change in Q-value and resonance frequency.

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Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

Cited by 81 publications

References 19 publications

A simple and powerful analytical model for MEMS piezoelectric multimorphs

A simple and powerful analytical model for MEMS piezoelectric multimorphs

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Qualification and Applications of a Piezoelectric MEMS Process

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