Pb(Zr x Ti 1-x )O 3 : PZT] films at morphotropic phase boundary composition (x = 0.52) were deposited on bare Si, ZrO 2 /Si and Pt/Ti/SiO 2 /Si substrates by sol-gel spin on technique. Films deposited on the bare Si and ZrO 2 / Si substrates had low degree of crystallization and micro cracks. Well crystallized films with smooth microstructure were obtained on Pt/Ti/SiO 2 /Si substrates. Further, the thickness of the films on Pt/Ti/SiO 2 /Si substrate was increased up to *1 lm by step-by-step crystallization process. The single perovskite phase of the above films was confirmed with X-ray diffraction analysis. Films had enhanced dielectric properties at room temperature and the dielectric constant values were comparable to those of bulk values at Curie temperature (T c ) from the temperature dependent dielectric measurements. Films exhibit higher remnant polarization (P r ) and lower coercive field (E c ) values. Further, capacitance-voltage (C-V), current-voltage (I-V) measurements and rough estimation of piezoelectric coefficient of the films were carried out.