Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Jegatheesan, P.; Giridharan, N. V.

doi:10.1007/s10854-011-0556-x

Cited by 9 publications

(4 citation statements)

References 23 publications

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“…PZT 4 ) and titanium IV Propoxide (Ti(C 4 H 9 ) 4 ) as precursors. 2-MethoxyEthanol and 1-propanol were used as solvents.…”

Section: Methodsmentioning

confidence: 99%

“…The use of thin films will benefit in view of requirement of minimum energy exchange to obtain high performance and sensitivity [3]. The widely studied composition of PZT is Zr/Ti ratio of 52/48, at this ratio both rhombohedral and tetragonal phases coexist and from perovskite phase [4]. Nanocrystalline thin films have the advantage of superior phase homogeneity, control of microstructure and band gap parameters, leading to unique optical, magnetic, mechanical, electrical and catalytic properties [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Sreelalitha

Thyagarajan

2016

J Mater Sci: Mater Electron

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PZT [Pb (Zr 0.52 Ti 0.48 )O 3 ] thin films were prepared on quartz substrate by sol gel spin coating technique. The Zr/Ti ratio was kept at 52/48 which is morphotropic phase boundary (MPB). At MPB both tetragonal and rhombohedral phases coexist and greatly influence the physical properties. In this work the PZT thin films were coated with sol kept at room temperature and at 125°C as 3 (SQ1) and 2 (SQ2) layers. The structural, morphological, compositional and optical properties of coated thin films were studied using X-ray diffraction, scanning electron microscopy (SEM) and UV-Visible spectroscopy. The X-ray diffraction patterns reveal perovskite phase formation for both the films annealed to 660°C. The micro structural parameters such as lattice constant, crystallite size, dislocation density and strain were determined. The grain size increases with increase in sol temperature from 24 to 27 nm. The SEM analysis indicates dense structure of films with good adhesion to the substrate. The cross sectional view of the films provides the thickness of films as 760 and 955 nm. The EDAX data gives the composition of the films. Optical spectra indicate that the films have direct band transitions. The band gap values were dependent on crystallite size and strain. As thickness increases the band gap value decreases from 3.73 to 3.26 eV.

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“…PZT 4 ) and titanium IV Propoxide (Ti(C 4 H 9 ) 4 ) as precursors. 2-MethoxyEthanol and 1-propanol were used as solvents.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Sreelalitha

Thyagarajan

2016

J Mater Sci: Mater Electron

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“…Compared with those, piezoelectric accelerometers have advantages of low power cost, high range of applying frequency, and less temperature dependence which is proper to vibration sensing . Since Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films have great electromechanical coupling coefficients and piezoelectric constants, they are widely used in MEMS system. Due to low cost, easily preparing and no vacuum equipment, the traditional process prepared PZT film in accelerometer devices is usually via sol‐gel method .…”

Section: Introductionmentioning

confidence: 99%

Study of Pb(Zr_0.52Ti_0.48)O₃ microelectromechanical system piezoelectric accelerometers for health monitoring of mechanical motors

et al. 2019

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In this study, piezoelectric Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thick films were fabricated on Pt-coated Si substrates by a modified sol-gel method via dispersing the piezoelectric submicron powders of composition (Pb, Sr)La x (Ti, Zr) 1−1/4x O 3 (PZT-5A, having a high d 33 value of 520 and a high k p value of 0.64) in the PZT sol-gel solution. Then, piezoelectric microelectromechanical system (MEMS) accelerometers were designed and fabricated on Si substrates via micromachining techniques. A mathematic approximation model was firstly proposed. It used an effective thickness of Si membrane (h eff ) to replace the thickness of Si membrane, derived by math theory. The resonant frequency using the mathematic approximation model would be closer to the values of the experimental data than using the original math theory. Finally, the self-made thick film accelerometers with best properties were fabricated via a modified sol-gel method. They had voltage sensitivities in the range of 2.21-2.14 mV/g, which is pretty high compared with the reported data, and the resonant frequency is in the range of 6.5-7.1 kHz. In addition, the accelerometers with amplifier circuit and power source were practically used in vibration detection of health monitoring of mechanical motors. K E Y W O R D Saccelerometer, MEMS, piezoelectric thick film, PZT-5A, sol-gel, vacuum infiltration

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“…Due to the excellent mechanical and electrical properties, lead-zirconate-titanate (PZT) thick film shows great promising application in ferroelectric devices such as sensors, actuators, ultrasonic motors. [1][2][3][4][5] As the MEMS technology developed rapidly in the last decades, PZT thick films device on Si substrate attracts more and more interest in realization of small size, light mass, little power loss, easy integration, and so on. 6,7) It is crucial to deposit and pattern the PZT thick films to fabricate MEMS devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of Pb₅Ge₃O₁₁on pyroelectric lead–zirconate–titanate thick films deposited on silicon substrate by electrophoresis deposition

Wu¹,

Peng²,

Sun³

et al. 2015

Jpn. J. Appl. Phys.

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The effects of Pb5Ge3O11 (PGO) sintering additive on the sintering temperature (Ts) and pyroelectric properties of 1 × 1 mm2 lead–zirconate–titanate (PZT) thick films on Pt/Ti/SiO2/Si substrates were studied. The pattern of PGO-added PZT thick films were formed directly by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range from 0 to 9 wt % and 700 to 900 °C, respectively. The energy dispersive spectrometer (EDS) results showed that the diffusion between Si and PZT were weaken gradually as the Ts decreased. The sintered PZT films sintered at 800 °C with 3 wt % PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73 × 10−8 C/(cm2·K), figure of merit for detectivity (FD) of 1.9 × 10−5 Pa−0.5, permittivity of 330 and dielectric loss of 1.5% (1 kHz), respectively. These results demonstrate that the directly patterned PGO-added PZT thick films fabricated by EPD show potential application in MEMS detectors.

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Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Cited by 9 publications

References 23 publications

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Study of Pb(Zr_0.52Ti_0.48)O₃ microelectromechanical system piezoelectric accelerometers for health monitoring of mechanical motors

Effects of Pb₅Ge₃O₁₁on pyroelectric lead–zirconate–titanate thick films deposited on silicon substrate by electrophoresis deposition

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Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Cited by 9 publications

References 23 publications

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Study of Pb(Zr0.52Ti0.48)O3 microelectromechanical system piezoelectric accelerometers for health monitoring of mechanical motors

Effects of Pb5Ge3O11on pyroelectric lead–zirconate–titanate thick films deposited on silicon substrate by electrophoresis deposition

Contact Info

Product

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About

Study of Pb(Zr_0.52Ti_0.48)O₃ microelectromechanical system piezoelectric accelerometers for health monitoring of mechanical motors

Effects of Pb₅Ge₃O₁₁on pyroelectric lead–zirconate–titanate thick films deposited on silicon substrate by electrophoresis deposition