Piezoresponse force microscopy for polarity imaging of GaN

Rodriguez, Brian J.; Gruverman, Alexei; Kingon, Angus I.; Nemanich, R. J.; Ambacher, O.

doi:10.1063/1.1483117

Cited by 87 publications

(65 citation statements)

References 22 publications

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“…9,10 A slightly higher piezoresponse observed for the N-face regions was associated with a larger total polarization and the correspondingly larger bound surface charge. 9 This was consistent with Raman measurements of the relative peak shifts across the IDBR. 10 The measurements indicated that the N-face region is under less compressive stress, which implies a smaller piezoelectric polarization and a larger total polarization for the N face.…”

Section: Introductionsupporting

confidence: 77%

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Yang

Rodriguez

Park

et al. 2003

Journal of Applied Physics

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An intentionally grown GaN film with laterally patterned Ga-and N-face polarities is studied using in situ UV-photoelectron emission microscopy ͑PEEM͒. Before chemical vapor cleaning of the surface, the emission contrast between the Ga-and N-face polarities regions was not significant. However, after cleaning the emission contrast between the different polarity regions was enhanced such that the N-face regions exhibited increased emission over the Ga-face regions. The results indicate that the emission threshold of the N-face region is lower than that of the Ga face. Moreover, bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure. The PEEM polarity contrast and intense emission from the inversion domain boundary regions are discussed in terms of the built-in lateral field and the surface band bending induced by the polarization bound surface charges.

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Section: Introductionsupporting

confidence: 77%

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Yang

Rodriguez

Park

et al. 2003

Journal of Applied Physics

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“…(11)(12)(13)(14) thus describe static deflection at frequencies well below the first resonance. Note that the relative magnitudes of these contributions are, as expected, sensitive to the length of the cantilever and for stiff cantilevers, From Eqs.…”

Section: Iii2 Cantilever Dynamics In Pfmmentioning

confidence: 99%

“…9,10,11 It was shown recently that vector PFM can be used to determine local molecular or crystallographic orientation in piezoelectric materials, provided that all three components of electromechanical response vector are determined quantitatively. 12 Broad applicability of PFM to materials such as ferroelectric perovskites, piezoelectric III-V nitrides, 13 and, recently, biological systems such as calcified and connective tissues, 14,15,16 has necessitated fundamental theoretical studies of image formation mechanism in PFM to provide the guidelines for quantitative data acquisition and interpretation. It was recognized that electrostatic tip-surface forces and buckling oscillations of the cantilever can provide significant and in some cases even dominating contributions to the PFM signal.…”

Section: Introductionmentioning

confidence: 99%

Dynamic behaviour in piezoresponse force microscopy

Jesse

Baddorf

Kalinin³

2006

Nanotechnology

113

114

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Frequency dependent dynamic behavior in Piezoresponse Force M icroscopy (PFM ) implemented on a beam-deflection atomic force microscope (AFM ) is analyzed using a combination of modeling and experimental measurements. The PFM signal comprises contributions from local electrostatic forces acting on the tip, distributed forces acting on the cantilever, and three components of the electromechanical response vector. These interactions result in the bending and torsion of the cantilever, detected as vertical and lateral PFM signals.The relative magnitudes of these contributions depend on geometric parameters of the system, the stiffness and frictional forces of tip-surface junction, and operation frequencies. The dynamic signal formation mechanism in PFM is analyzed and conditions for optimal PFM imaging are formulated. The experimental approach for probing cantilever dynamics using frequency-bias spectroscopy and deconvolution of electromechanical and electrostatic contrast is implemented. * Corresponding author, sergei2@ornl.gov 2

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“…PFM has been employed to determine the polarity in llJ-nitride thin films and bulk crystals [47][48][49]. PFM of a GaN-based LPH is shown in Figure 14.…”

Section: Measurement Of Polarity Effects By Spmmentioning

confidence: 99%

“…They employed scanning capacitance microscopy (SCM) to investigate threading dislocations in GaN. Since then, SCM [13][14][15], electrostatic force microscopy (EFM) [16][17][18][19][20], Kelvin probe force microscopy (KPFM) [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36],conductive-tip atomic force microscopy (C-AFM) [35][36][37][38][39][40][41][42][43][44][45][46], piezoresponse force microscopy (PFM) [47][48][49][50] and scanning gate microscopy (SGM) [51] have all been employed to characterize III-nitride films and surfaces.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

Rodriguez

Gruverman

Nemanich

Scanning Probe Microscopy

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Recent interest in the technological potential of nitride-based semiconductors has led to the development and commercialization of a wide range of electronic devices. The nanoscale investigation of the electric properties of III-nitride thin films, bulk crystals, and heterostructures is of considerable interest for determining how interfaces, defects, and inversion domain boundaries affect device performance. The pyroelectric nature of wurtzitic III-nitrides is characterized by a spontaneous polarization that exists without the presence of an external field and by a polarization-bound surface charge. Scanning probe-based measurements of surface contact potentials and surface band bending in these materials, which are of crucial importance to device design, are summarized in this review chapter. In addition, the role of charged defects on device performance is explored by scanning probe techniques. Lastly, the measurement of polarity and of the screening mechanism of III-nitrides, which are fundamental issues for the fabrication of devices based on polarity effects, are discussed. This chapter provides a critical analysis of the contributions made by scanning probe-based techniques toward a deeper understanding of the III-nitride material system.

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Piezoresponse force microscopy for polarity imaging of GaN

Cited by 87 publications

References 22 publications

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Dynamic behaviour in piezoresponse force microscopy

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

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