Pixeled Electroluminescence from Multilayer Heterostructure Organic Light-Emitting Transistors

Song, Li; Hu, Yong‐Sheng; Li, Dongwei; Chen, Hong; Liu, Xingyuan

doi:10.1021/acs.jpcc.5b04708

Cited by 16 publications

(24 citation statements)

References 40 publications

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“…The EQE for the device without DBR reaches as high as 1.8% around V GS = −70 V and maintains at 1.5% at the brightness of 2600 cdm −2 . The high EQE mainly results from the high exciton recombination efficiency, which is typically in the order of 10 −2 ~10 0 % in the literatures 14 19 23 , due to the well energy level alignment between the organic layers. Given to the formular 27 that Φ EQE = Φ out × Φ spin × Φ PL × Φ rad , where Φ out is the outcoupling efficiency, Φ spin is a factor to take account of spin statistics, Φ PL is the fluorescent quantum efficiency that is ~68% by the measurement, and Φ rad is the exciton recombination efficiency.…”

Section: Resultsmentioning

confidence: 99%

“…Considering that the emission from OLEFETs is mainly in the vertical direction, it would be more appropriate to introduce a resonator vertically. Recently, OLEFETs with large emission area under the source/drain (S/D) electrodes have been reported by several groups 11 12 13 14 . Although the absorption loss from the metal electrodes would increase, it is of great convenience to build a vertical microcavity in such an OLEFET, since the metal electrodes can act as one of the mirrors of the cavity.…”

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confidence: 99%

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Vertical Microcavity Organic Light-emitting Field-effect Transistors

Lin

Song

et al. 2016

Sci Rep

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Organic light-emitting field-effect transistors (OLEFETs) are regarded as a novel kind of device architecture for fulfilling electrical-pumped organic lasers. However, the realization of OLEFETs with high external quantum efficiency (EQE) and high brightness simultaneously is still a tough task. Moreover, the design of the resonator structure in LED is far from satisfactory. Here, OLEFETs with EQE of 1.5% at the brightness of 2600 cdm−2, and the corresponding ON/OFF ratio and current efficiency reaches above 104 and 3.1 cdA−1, respectively, were achieved by introducing 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN) as a charge generation layer. Moreover, a vertical microcavity based on distributed Bragg reflector (DBR) and Ag source/drain electrodes is successfully introduced into the high performance OLEFETs, which results in electroluminescent spectrum linewidth narrowing from 96 nm to 6.9 nm. The results manifest the superiority of the vertical microcavity as an optical resonator in OLEFETs, which sheds some light on achieving the electrically pumped organic lasers.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Vertical Microcavity Organic Light-emitting Field-effect Transistors

Lin

Song

et al. 2016

Sci Rep

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“…Song and coworkers fabricated a multilayer heterostructure OLET with an embedded ultrathin MoO x layer and a TPBI buffer layer to regulate the charge transfer process (Figure 16d–f). [ 101 ] Light‐emitting pixels of different sizes between 25 and 400 μm were obtained by limiting the width of the gate electrode, and the light‐emitting pixel space was stable. It is worth noting that the EQE and brightness increased as the gate electrode became narrower.…”

Section: Olet Devicesmentioning

confidence: 99%

High‐Mobility Organic Light‐Emitting Semiconductors and Its Optoelectronic Devices

2020

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An organic light‐emitting transistor (OLET) integrates the field‐effect trans‐conductance characteristics of an organic field‐effect transistor (OFET) and the electric‐injection light‐emitting properties of an organic light‐emitting diode (OLED). The corresponding active layer of the device achieves controllable photoelectric coupling conversions. Therefore, a new method is theoretically provided for studying the carrier transmission characteristics and exciton emission theory. Furthermore, the integrated device characteristics of OLETs render their potential to advanced display technology, multifunctional optoelectronics, and electrically pumped organic lasers. However, OLET devices are yet to meet industrial requirements, mainly due to limitations in material performance and device fabrication techniques. Herein the basic factors that influence the mobility and luminescence properties of semiconducting materials are outlined and recent reports on OLET devices with a focus on material design, device fabrication, and operational mechanisms are summarized. More specifically, new functional optoelectronic devices based on high‐mobility emissive materials are described, including OFET–OLED active circuits based on the same active material, optical switching devices, and organic field‐effect optical waveguides. Herein, new insight into material design and device fabrication, which may be of great interest to scientists working in the field, is provided.

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“…The two power sources were located at the different positions relative to the substrate position, and the different positions of the two power sources provided different deposition angles. This resulted in the asymmetric source/drain electrode structure . For the pixelated OLET with an optically thin Al/MoO 3 layer, the asymmetric source/drain electrode structure was also introduced via the same method.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Pixelated Organic Light‐Emitting Transistor (OLET) with a Pure Red‐Emitting Organic Semiconductor

Kim

Ryoo

et al. 2019

Advanced Optical Materials

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semiconductors with carrier mobilities insufficient to be useful for OLET applications. Therefore, developing high-purity red-emitting materials showing a high transistor mobility at the same time is a primary challenge to embodying highperformance OLETs in display devices.We have been exploring a broad library of dicyanodistyrylbenzene (DCS)-type materials that show excellent photoluminescence (PL) quantum efficiency and/or charge carrier mobility in the solid state by virtue of their unique stacking modes and propensity for strong self-assembly. [12,[18][19][20][21][22] Recently, we have specifically demonstrated that a charge-transfer (CT) cocrystal of DCS derivatives can be a light-emitting ambipolar semiconductor, which is ideally suitable for OLET applications. [23] Aiming at finding a potentially pure red-emitting organic semiconductor, we reviewed the whole DCS library, particularly for the π-extended ones. Fortunately, we came across Hex-4-TFPTA ((2E,2′E)-3,3′-(2,5-bis(hexyloxy)-1,4-phenylene) bis(2-(5-(4-(trifluoromethyl)phenyl) thiophen-2-yl)acrylonitrile) (Figure 1a), which has reportedly shown an excellent n-type mobility in a vacuum-evaporated film (µ e ≈ 2 cm 2 V −1 s −1 ) but with an unexplored photoluminescence property. [21] In this work, we decided to first investigate the photoluminescence properties of Hex-4-TFPTA and its application in the red-emitting OLET devices. We thoroughly investigated the photophysical properties of the crystal and solid thin film, in terms of intermolecular stacking mode (J-/H-aggregation), size of the crystal, and excimeric contributions. In addition, the electrical properties of Hex-4-TFPTA were properly reevaluated by introducing different metal electrodes to ensure a small contact resistance and to prevent the probable mobility overestimation [24,25] of organic field-effect transistors (OFETs) by their nonlinear transfer curve.Subsequently, Hex-4-TFPTA single-layered OLET devices were fabricated and characterized in terms of their charge transport and electroluminescence (EL). Finally, micropatterned pixels of the Hex-4-TFPTA OLET were fabricated by using a soft-lithographic technique called "patterned taping" [26] and employing a semitransparent electrode. [27,28] This report is actually the first example of pixelated emission from an OLET which was demonstrated by patterning the organic layer with a lithographic technique.The Hex-4-TFPTA crystalline solid states (Figure 1a-c) showed a deep red (DR) emission of which the peak wavelengths were 683 and 631 nm (Figure 1d) for the single crystal A pure red-emitting organic light-emitting transistor (OLET) is successfully fabricated using a π-extended dicyanodistyrylbenzene-type organic semiconductor material (Hex-4-TFPTA), which shows outstanding charge transport and solid-state luminescence at the same time. Based on the structural (X-ray) and photophysical analyses, it is found that the appropriate molecular stacking and highly allowed S 1 →S 0 transition of Hex-4-TFPTA created the ambidextrous balance between el...

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Pixeled Electroluminescence from Multilayer Heterostructure Organic Light-Emitting Transistors

Cited by 16 publications

References 40 publications

Vertical Microcavity Organic Light-emitting Field-effect Transistors

Vertical Microcavity Organic Light-emitting Field-effect Transistors

High‐Mobility Organic Light‐Emitting Semiconductors and Its Optoelectronic Devices

Fabrication of Pixelated Organic Light‐Emitting Transistor (OLET) with a Pure Red‐Emitting Organic Semiconductor

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