Vertical Microcavity Organic Light-emitting Field-effect Transistors

Hu, Yong‐Sheng; Lin, Jie; Song, Li; Lu, Qipeng; Zhu, Wanbin; Liu, Xingyuan

doi:10.1038/srep23210

Cited by 16 publications

(17 citation statements)

References 39 publications

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“…[12,[14][15][16][35][36][37] This limited efficiency roll-off is confirmed in Figure 4b that represents EQE averaged over the whole linear region as a function of current density. [12,[14][15][16][35][36][37] This limited efficiency roll-off is confirmed in Figure 4b that represents EQE averaged over the whole linear region as a function of current density.…”

Section: Wwwadvelectronicmatdesupporting

confidence: 58%

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Overlapping‐Gate Organic Light‐Emitting Transistors

Lee

Genoe

et al. 2018

Adv Elect Materials

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The most common OLET architecture relies on a single gate (SG-OLETs) to control the transport of both electrons and holes toward the radiative recombination zone. As a consequence, hole-electron current balance in SG-OLETs can only be achieved at an intermediate gate bias. When driven at high currents, the current imbalance in SG-OLETs usually results in inefficient light emission very close to, or even under the source electrode of the transport layer with the lowest conductivity. [1,[11][12][13][14][15][16] In addition, the emission zone can unpredictably switch from one contact to the other upon small bias changes. [17][18][19][20][21][22] For these reasons, considerable roll-off is observed at increasing bias. Only a few fluorescent SG-OLETs have achieved external quantum efficiency (EQE) over 5% [12,13] and the peak EQE is only obtained at very low current and luminance. [12][13][14]17,[20][21][22] A variation around the SG-OLET topology is the vertical OLET where hole and electron sources are stacked above the gate whose main objective is to modulate charge injection from one of the sources into the device. [23][24][25][26] This compact topology intimately integrates the actions of switching and light emission, which is particularly suited for display applications. But the vertical OLET also suffers from roll-off when driven at high current densities. For all SG-OLET topologies, maintaining the high efficiency at high current level with balanced hole-electron currents remains a major challenge.Dual gate OLETs with two adjacent gates formed by the direct patterning of a single metallic film ("split-gate") have been proposed to decouple electron and hole currents and simultaneously achieve balanced transport at high current density. Unfortunately, the large spatial gap between the gates, more than 1 µm, forms a highly resistive active region which limits the current, resulting in low luminance (below 1000 cd m −2 ) and low EQE (1.3%). [27][28][29][30] Also "opposinggate" dual-gate OLETs have been proposed, where the active organic layer stack is vertically sandwiched between two insulators and two gates that each accumulate one species of charge carriers at either side of the active layer. But the vertical electric field between the gates strongly opposes charge injection and recombination into the central emissive layer, resulting in poor light emission. [31] In this work, we propose a novel dual-gate architecture, the overlapping-gates OLET (OG-OLET), that overcomes the shortcomings of previous OLET topologies. We show how this new device combines the important features of balanced electronhole transport up to high current density and light emission far A light-emitting transistor in which two gates, separated by an insulator, partially overlap in the center of the device is proposed. By accumulating charge carriers in dedicated transport layers, each gate independently controls charge injection into the emissive layer sandwiched between the transport layers. This structure combines the advantages of pinned...

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Section: Wwwadvelectronicmatdesupporting

confidence: 58%

“…[1,[11][12][13][14][15][16] In addition, the emission zone can unpredictably switch from one contact to the other upon small bias changes. As a consequence, hole-electron current balance in SG-OLETs can only be achieved at an intermediate gate bias.…”

mentioning

confidence: 99%

Overlapping‐Gate Organic Light‐Emitting Transistors

Lee

Genoe

et al. 2018

Adv Elect Materials

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“…In addition to introducing plasmonic or photonic structures inside the channel, LEFETs can be integrated as part of a complete Fabry‐Pérot cavity (i.e., two parallel mirrors at a distance similar to the wavelength of interest or multiples of it) without any effect on their electrical properties . The metallic (e.g., gold or silver) gate electrode can act as one of the cavity mirrors.…”

Section: Novel Applications Of Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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“…To overcome some of the limitations of (AM-)OLEDs, research on different structures and materials is currently yielding new developments [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Among these, organic light-emitting transistors (OLETs), such as static-inductiontransistor OLETs (SIT-OLETs) [17,18], metal-insulator-semiconductor OLETs (MIS-OLETs) [19], lateral-type OLETs [20][21][22][23][24][25][26][27][28][29], and vertical-type OLETs (VOLETs) [30], have been devised by integrating the capability of the OLED to generate EL light with the switching functionality of a field-effect transistor (FET) into a single device structure. In these OLETs, the current that flows through emissive semiconductor channel layers can be controlled by the gate voltage, which can also change the EL emission brightness state from the dark off-to the bright on-state.…”

Section: Introductionmentioning

confidence: 99%

“…In these OLETs, the current that flows through emissive semiconductor channel layers can be controlled by the gate voltage, which can also change the EL emission brightness state from the dark off-to the bright on-state. The on-state implies that holes and electrons injected into the channel layer form excitons that recombine radiatively to generate EL light [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. These OLETs are of key interest; not only do they provide a novel device architecture to investigate fundamental optoelectronic properties related to charge carrier injection, transport, and radiative exciton recombination processes in organic semiconducting materials, at the same time OLETs can also be used to develop highly integrated organic optoelectronic devices such as highly bright and efficient light sources, optical communication systems, and electrically driven organic lasers [21][22][23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Vertical-Type Organic Light-Emitting Transistors with High Effective Aperture Ratios

Park¹,

Lee²,

Na³

et al. 2020

Liquid Crystals and Display Technology

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The inherent complexity of the structures of active-matrix (AM) organic lightemitting diode (OLED) displays severely limits not only their size but also device performance. Surface-emitting organic light-emitting transistors (OLETs) may offer an attractive alternative to AM displays. We report some characteristics of vertical-type OLETs (VOLETs) composed of a source electrode of low-dimensional materials and an emissive channel layer. With a functionalized graphene source, it is shown that the full-surface electroluminescent emission of a VOLET can be effectively controlled by the gate voltage with a high luminance on/off ratio (10 4). The current efficiency and effective aperture ratios were observed to be more than 150% of those of a control OLED, even at high luminances exceeding 500 cd m −2. Moreover, high device performance of micro-VOLET pixels has been also successfully demonstrated using inkjet-patterned emissive channel layers. These significant improvements in the device performance were attributed to the effective gatevoltage-induced modulation of the hole tunneling injection at the source electrode.

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Vertical Microcavity Organic Light-emitting Field-effect Transistors

Cited by 16 publications

References 39 publications

Overlapping‐Gate Organic Light‐Emitting Transistors

Overlapping‐Gate Organic Light‐Emitting Transistors

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Vertical-Type Organic Light-Emitting Transistors with High Effective Aperture Ratios

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