Planar waveguide lasers by proton implantation in Nd:YAG crystals

Flores-Romero, E.; Vázquez, G. V.; Márquez, H.; Rangel-Rojo, R.; Rickards, J.; Trejo-Luna, R.

doi:10.1364/opex.12.002264

Cited by 36 publications

(8 citation statements)

References 1 publication

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“…For the calculation of propagation losses in the waveguides, we used the transmitted light method [1,9,10], in which light is measured at the entrance and output of one waveguide, and the attenuation coefficient α is calculated using the following expression:…”

Section: Resultsmentioning

confidence: 99%

Waveguiding properties in Yb:YAG crystals implanted with protons and carbon ions

et al. 2012

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We report the fabrication and analysis of optical waveguides in Yb:YAG crystals using either proton or carbon ion implantation. Planar waveguides were obtained by implanting the whole surface of the crystals. Channel waveguides were defined using an electroformed mask with apertures of 10, 15, and 20 micrometers in width. The waveguiding properties of the structures were analyzed, showing good light confinement based on the transversal mode distribution and optical transmission measurements. The spectroscopic properties of the Yb ions in the YAG host are preserved after the implantation process, which demonstrates the potential of this technique for tailoring microcomponents for integrated optics applications. In particular, the Yb:YAG waveguides have the potential to operate as miniature lasers.

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Section: Resultsmentioning

confidence: 99%

Waveguiding properties in Yb:YAG crystals implanted with protons and carbon ions

et al. 2012

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“…Potassium Titanyl Phosphate (KTiOPO 4 , KTP) with its large optical nonlinearity, high optical damage threshold and outstanding thermal stability, is an important material for integrated optics [1]. Optical waveguides, as basic component of modern integrated photonic circuits, can confine light propagation in small volumes and reach much higher optical density with respect to bulk materials [2][3][4]. Optical waveguides have been fabricated in various materials by ion exchange [5], ion implantation [6][7][8][9], swift heavy-ion irradiation [10] and femtosecond laser inscription [11,12].…”

Section: Introductionmentioning

confidence: 99%

The lattice expansion, damage effect and propagation loss of KTiOPO4 waveguides formed by ion implantation

et al. 2017

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We investigated the damage effect on the refractive index as well as the lattice expansion induced by C 3+ ion implantation into KTiOPO 4 crystals. A KTiOPO 4 channel waveguide was formed by area-selective 6.0 MeV C 3+ ion implantation at a fluence of 5×10 13 ions/cm 2 using photoresist masking, and planar waveguides were formed by ion implantation with 6.0 MeV C 3+ ions at fluences from 8×10 12 ions/cm 2 to 6×10 14 ions/cm 2 . The propagation loss of the KTiOPO 4 planar waveguides at 633 nm fabricated at fluences of 2×10 13 ions/cm 2 and 5×10 13 ions/cm 2 after annealing is as low as 0.38 and 0.54 dB/cm, respectively. Prism coupling and refractive index profile reconstruction using the reflectivity calculation method were used to investigate the anisotropy of the refractive indices in the KTiOPO 4 waveguides region before and after annealing. The lattice expansion induced by ion implantation was investigated by combining X-ray rocking curves with atomic force microscopy. Rutherford backscattering spectrometry and channeling was applied for damage analysis, and the relationship between effective refractive index and relative defect concentration was studied.

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“…Ion implantation has been shown to be capable of fabricating high quality planar waveguides [5]; however, the inability to selectively position the active laser ion in the core region precludes the fabrication of double clad structures, posing difficulties for attaining good beam quality from devices pumped by high power diode laser arrays, which typically have non-diffraction limited beam quality. Another fabrication technique, liquid phase epitaxy is capable of limiting dopant to the core regions [6,7]; however the process is not conducive to fabrication of precise multi-layer structures with large numerical apertures (NA) suitable for high power diode laser pumps.…”

Section: Introductionmentioning

confidence: 99%

Diode-end-pumped 12 W Yb:Y_2O_3 planar waveguide laser

Beecher¹,

Parsonage²,

Mackenzie³

et al. 2014

Opt. Express

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Fabrication, characterization and laser performance of a Watt-level ytterbium-doped yttria waveguide laser is presented. The waveguide was grown onto a YAG substrate by pulsed laser deposition and features a 6 µm thick ytterbium-doped yttria layer sandwiched between two 3 µm undoped yttria layers. The laser deposited film was characterized by X-ray diffraction, showing a high degree of crystallinity and analyzed spectroscopically, showing performance indistinguishable from previously reported bulk material. When pumped with 8.5 W from a broad area diode laser the waveguide laser produces 1.2 W of output at 1030 nm.

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Planar waveguide lasers by proton implantation in Nd:YAG crystals

Cited by 36 publications

References 1 publication

Waveguiding properties in Yb:YAG crystals implanted with protons and carbon ions

Waveguiding properties in Yb:YAG crystals implanted with protons and carbon ions

The lattice expansion, damage effect and propagation loss of KTiOPO4 waveguides formed by ion implantation

Diode-end-pumped 12 W Yb:Y_2O_3 planar waveguide laser

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