Plasma and Thermal ALD of Al[sub 2]O[sub 3] in a Commercial 200 mm ALD Reactor

Abstract

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Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

“…From such differential spectra, it is concluded that -OH groups were incorporated in the Al 2 O 3 bulk with the amount of -OH incorporated increasing when going to lower deposition temperatures. This observation is in line with previous reports, 5,9,14 as well as with the compositional data of Al 2 O 3 films deposited in the temperature range studied, i.e., x = ͓O͔ / ͓Al͔ = 1.6 with ϳ4 at. % H at 150°C, x = 1.7 with ϳ7 at.…”

“…1 for H 2 O, 2,9-13 O 3 , 2,13 and O 2 plasma. 9 For temperatures Ͼ100°C, the growth per cycle of Al 2 O 3 monotonically decreases with increasing deposition temperature for all three oxidant sources and the differences are relatively small. Only below 100°C, the growth per cycle significantly differs which has been attributed to difficulties to achieve saturation when dosing H 2 O.…”

“…Only below 100°C, the growth per cycle significantly differs which has been attributed to difficulties to achieve saturation when dosing H 2 O. 9,10 For the H 2 O-based process, the decrease in growth per cycle with increasing temperature has been related to the thermal stability of the -OH surface groups which are involved in the Al͑CH 3 ͒ 3 chemisorption reactions. 5,10 The O 2 plasma-based process shows a similar decrease but for the complete temperature range ͑25-400°C͒.…”

“…It was verified that the growth per cycle and Al 2 O 3 film quality were similar to results obtained on substrates positioned on the substrate holder. 9,14 In between the ALD half-reactions, transmission infrared spectra ͑2 ϫ 256 scans͒ were collected by an infrared interferometer ͑Bruker, Tensor 27͒ with an external liquid-N 2 cooled HgCdTe detector ͑Bruker, D313͒. The absorbance spectra were averaged over 40 ALD cycles to reduce the noise level to ϳ5 ϫ 10 −6 .…”

Electric field induced surface passivation of Si by atomic layer deposited Al<inf>2</inf>O<inf>3</inf> studied by optical second-harmonic generation

“…More details on the preparation of the AI 203 films and their analysis, demonstrating for example a atomic composition of [O]/[AI]=1 .5, a H-content of 2 at.% and a refractive index of 1.62 at 2 eV, can be found in Ref. 20. High resolution transmission electron microscopy (HR-TEM) images, such as shown in Fig.…”