Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

Cote, D.; Nguyen, S.; Stamper, A. K.; Armbrust, D.; Többen, D.; Conti, Richard; Lee, G. Y.

doi:10.1147/rd.431.0005

Cited by 90 publications

(41 citation statements)

References 115 publications

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“…[1] In less than 100 years, plasma and plasma-related technologies have already become an indispensible part for the modern sciences and technologies that are of fundamental importance for the human being, including energy sciences, [2,3] information technologies, [4,5] life and medical science, [6][7][8] environmental sciences, [9][10][11][12][13] and materials sciences. [11][12][13][14] Concerning material preparation and processing, plasma techniques have found important applications in thin-film deposition, [15][16][17][18] etching, [4,5,14,19] and surface modifications. [6,12,20] Particularly, microstructure fabrication based on plasma etching plays a central role in microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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Plasma is a unique medium for chemical reactions and materials preparations, which also finds its application in the current tide of nanostructure fabrication. Although plasma-assisted approaches have been long used in thin-film deposition and the top-down scheme of micro-/nanofabrication, fabrication of zero- and one-dimensional inorganic nanostructures through the bottom-up scheme is a relatively new focus of plasma application. In this article, recent plasma-assisted techniques in inorganic zero- and one-dimensional nanostructure fabrication are reviewed, which includes four categories of plasma-assisted approaches: plasma-enhanced chemical vapor deposition, thermal plasma sintering with liquid/solid feeding, thermal plasma evaporation and condensation, and plasma treatment of solids. The special effects and the advantages of plasmas on nanostructure fabrication are illustrated with examples, emphasizing on the understandings and ideas for controlling the growth, structure, and properties during plasma-assisted fabrications. This Review provides insight into the utilization of the special properties of plasmas in nanostructure fabrication.

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Section: Introductionmentioning

confidence: 99%

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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“…The deposition mechanisms for a PECVD process can be considered to consist of five major steps [14,15]:…”

Section: Deposition Mechanismmentioning

confidence: 99%

“…The electron-impact ionization and dissociation of silane and nitrous oxide molecules can be written by the following equations [14,16]:…”

Section: Deposition Mechanismmentioning

confidence: 99%

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

et al. 2007

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Silicon oxynitride (SiO x N y :H) layers were grown from 2%SiH 4 /N 2 and N 2 O gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and N 2 O/SiH 4 gas flow ratio. As a result, optimized SiO x N y :H layers could be produced over a wide index range (1.46-1.70) with good thickness uniformity and sufficiently high deposition rate. With a refraction index non-uniformity b5 × 10 − 4 a thickness non-uniformity could be obtained below 1% over a 70 × 70 mm 2 area of a 100 mm wafer at a deposition rate N 50 nm/min. The material composition and the optical properties of the SiO x N y :H layers were characterized by spectroscopic ellipsometry, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared spectroscopy and prism coupler techniques. A simple atomic valence model is found to describe the measured atomic concentrations for PECVD silicon oxynitride layers.

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“…Alternative technologies are thus being looked at. The process of plasma activated chemical vapour deposition (PACVD) is nowadays a key technology applied in a whole range of industries [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Anticorrosion behaviour of amorphous silicon-based coatings prepared by remote cold plasma-assisted chemical vapour deposition process

Delimi

2018

GJPAAS

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Organosilicon films were deposited on carbon steel samples using remote microwave nitrogen plasma-assisted chemical vapour deposition. The deposits were obtained using TetraMethyDisoloxane monomer mixed with oxygen. The formed films were characterised using electron microprobe analysis, Fourier transformed infrared spectroscopy, contact angle measurements, scanning electron microscopy and atomic force microscopy. The electrochemical properties of the organosilicon coatings were evaluated using gravimetric experiments next to electrochemical tests. A significant increase in the corrosion resistance behaviour of the organosilicon coated carbon steel specimen was found when the samples were immersed in 3% aqueous sodium chloride solutions. Also, the surface pre-treatment process of carbon steel had an important influence on the morphological and electrochemical behaviour. Argon pre-treatment improves significantly the corrosion resistance or organosilicon coated steel samples. Gravimetric tests in particular showed that samples pre-treated with argon result in lower weight loss and decreased corrosion rates compared to interfaces pre-treated with nitrogen plasma.

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Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

Cited by 90 publications

References 115 publications

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

Anticorrosion behaviour of amorphous silicon-based coatings prepared by remote cold plasma-assisted chemical vapour deposition process

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