Plasma charging damage in SOI technology

Mocuta, A.; Hook, T.; Chou, A.; Wagner, T.; Stamper, A. K.; Khare, Mukesh; Gambino, Jeff

doi:10.1109/ppid.2001.929989

Cited by 7 publications

(2 citation statements)

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“…V th and gate leakage current are increased by PID because defects are generated in a gate oxide. [20][21][22][23][24] V th increases when defects trap carriers. It is called the atomistic trap-based BTI model, [5][6][7][8][9][10] as shown in Fig.…”

Section: Degradation Caused By Plasma-induced Damagementioning

confidence: 99%

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Kishida¹,

Oshima

Yabuuchi

et al. 2015

Jpn. J. Appl. Phys.

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The degradation of reliability caused by plasma-induced damage (PID) has become a significant concern with the miniaturization of device size. In particular, it is difficult to relieve PID in silicon-on-insulator (SOI) because it contains buried oxide (BOX) layers. In this work, we compare PID between a bulk and a silicon on thin BOX (SOTB), which has BOX layers of less than 10 nm. We measure frequencies of ring oscillators with an antenna structure on a single stage. In the bulk, PID is relieved by first connecting an antenna to a drain because electric charge flows to a substrate. The difference in initial frequency is 0.79% between structures, which cause and relieve PID. SOTB also relieves the same amount of PID. Initial frequencies are affected by PID, but there is no effect of PID on the long-term degradation mainly caused by bias temperature instability (BTI).

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Section: Degradation Caused By Plasma-induced Damagementioning

confidence: 99%

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Kishida¹,

Oshima

Yabuuchi

et al. 2015

Jpn. J. Appl. Phys.

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“…Plasma-induced damage (PID) is caused by charge during metallization. [1][2][3][4][5][6] Charge is induced in metal wires during back-end-of-line (BEOL) interlayer dielectric processes. Charged metal wires are called antennas.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Kishida

Furuta

Kobayashi

2018

Jpn. J. Appl. Phys.

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Plasma-induced damage (PID) and bias temperature instability (BTI) are inevitable reliability issues that degrade the performance of transistors. In this study, PID and BTI, depending on the type of antenna layer, are evaluated in current-starved ring oscillators (ROs) to separate degradations in PMOS and NMOS transistors in a 65 nm silicon-on-insulator (SOI) process. Oscillation frequencies of ROs fluctuate with the performance of MOSFET switches between power/ground rails and virtual power/ground nodes. The initial frequencies of ROs with PMOS switches having antennas on upper layers decrease. However, those with NMOS switches become higher than those without PID because high-k dielectrics are damaged by positive charges. The degradation induced by negative BTI (NBTI) in PMOS is 1.5 times larger than that induced by positive BTI (PBTI) in NMOS. However, both NBTI-and PBTI-induced degradations are the same among different antenna layers. The frequency fluctuation caused by PID is converted to threshold voltage shifts by circuit simulations.

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Reliability characterisation of plasma induced charging damage (PID) for MOS transistors of a silicon on insulator (SOI) process using product relevant test structures and fWLR methods

Martin

Kamp

Berger

2021

2021 IEEE International Integrated Reliability Workshop (IIRW)

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Plasma charging damage in SOI technology

Cited by 7 publications

References 0 publications

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Reliability characterisation of plasma induced charging damage (PID) for MOS transistors of a silicon on insulator (SOI) process using product relevant test structures and fWLR methods

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