Plasma-chemical synthesis of silicon carbonitride films from trimethyl(diethylamino)silane

Films based on the phases in the Si-C-N System: Part 1. Synthesis and characterization of bis(trimethylsilyl)ethylamine as a precursor

“…At present, there are several methods for obtaining silicon carbonitride films using both physical and chemical methods of deposition. Among the latter, particular attention is given to methods which use volatile molecular precursors-organosilicon compounds such as hexamethyldisilazane (Me 3 Si) 2 NH [1,2,4,11,12,14,15], tetramenyldisilazane (Me 2 HSi) 2 NH [3,16,17], N bromohexamethyldisila zane (Me 3 Si) 2 NBr [18], (dimethylamino)dimethylsilane Me 2 NHSiMe 2 [19,20], trimethyl(diethylamino)silane Et 2 NSiMe 3 [21], bis(dimethylamino)methylsilane (Me 2 N) 2 HSiMe [9,22], bis(dimethylamino)dimethylsi lane (Me 2 N) 2 SiMe 2 [13,[23][24][25][26], tris(dimethy lamino)silane (Me 2 N) 3 HSi [27,28], dimethyl(2,2 dim ethylhydrazino)silane Me 2 HSiNHNMe 2 and dimethyl bis dimethylhydrazino silane Me 2 Si(NHNMe 2 ) 2 [29,30], bis(trimethylsilyl)carbodiimide (Me 3 Si) 2 N 2 C [4,6,31], hexamethylcyclotrisilazane (Me 2 SiNH) 3 [32][33][34][35], and 1,3 bis(dimethyl silyl) 2,2,4,4 tetrame thylcyclodisilazane (Me 2 HSiNSi) 2 [10]. At present, the effect of the structure and Si : C : N ratio in the molecule of the starting material on the properties of the SiC x N y films has been studied.…”

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

“…The a-Si:C:N:H films were also produced by means of RPECVD from bis(dimethylamino)-dimethylsilane (BDMADMS), [35][36][37] bis(dimethylamino)methylsilane (BDMAMS), described by I. Blasczyk-Lezak et al 38 tris(dimethylamino)silane (TrDMAS), 39 bis(trimethylsilyl)carbodiimide (BTSC), [40][41][42] dimethyl(2,2- dimethylhydrazino) silane (CH 3 ) 2 HSiNHN(CH 3 ) 2 , (DMDMHS) and dimethylbis-dimethylhydrazino silane (CH 3 ) 2 Si[NHN(CH 3 ) 2 ] 2 (DMbis-DMHSN), which are silyl derivatives of 1,1-dimethylhydrazine. 43 Recently, we started development of deposition of these films by using single-source precursors belonging to the class of aminosilanes such as trimethyl(phenylamino)silane, 44 trimethyl(diethylamino)silane, 45 tris(diethylamino)silane. 46 The application of single-source precursors simplifies and makes more controllable the deposition process and allows the improvement of properties of the deposited films.…”