Plasma chemistry during deposition of a-C:H

Benedikt, Jan; Letourneur, Kgy Karine; Wisse, M.; Schram, DC Daan; Sanden, van de Mcm Richard

doi:10.1016/s0925-9635(01)00534-9

Cited by 32 publications

(38 citation statements)

References 16 publications

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“…The main advantage of this technique is the generation of high concentration of the reactive species (radicals, atoms) that can form a coating with high deposition rates due to steep gradients in the boundary layer plasma -substrate. It has been obtained that the growth rate of hydrogenated amorphous carbon films (a-C:H) or polycrystalline diamonds produced by arc plasma jet technique can reach up to 100 nm/s [4][5][6][7]. Meanwhile, the growth rates of a-C:H obtained by traditional chemical vapour deposition (CVD) or physical vapour deposition (PVD) techniques are ten or hundred times lower compared to the arc plasma jet [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…The second advantage of this technique is the formation of carbon films at the atmospheric pressure conditions. However, despite these advantages, the deposition of a-C:H coatings is a complicated process and depends on many different factors [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Many authors [4][5][6][7][8][9][10][11][12] have demonstrated that the hydrogen concentration and corresponding proportion of the sp 2 and sp 3 carbon sites in the films determines the properties of carbon coatings. Variation of the deposition process parameters allows one to control and produce a-C:H films with desirable properties.…”

Section: Introductionmentioning

confidence: 99%

“…Variation of the deposition process parameters allows one to control and produce a-C:H films with desirable properties. It has been demonstrated that the type of hydrocarbon gases and its amount in plasma, the power of the torch, the pressure, the substrate temperature, and the plasma torch construction are very important factors during the deposition of films by plasma jet CVD [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Zaharia et al [5] have determined that the deposition rates in the acetylene gas is seven times greater than in methane. Benedikt et al [6,7] investigated the influence of the argon-acetylene gas ratios on ISSN 1648-8504 the a-C:H films growth kinetics and properties. Kessels et al [13] focused on influence of the substrate temperature on the hydrogen content and the growth rate of a-C:H. However, these researches were done under the reduced pressure conditions.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

Marcinauskas¹,

Grigonis²,

Valincius³

et al. 2009

Lithuanian J. Phys.

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The amorphous hydrogenated carbon films (a-C:H) were formed on the stainless steel substrates from an argon-acetylene gas mixture at atmospheric pressure using a direct current plasma torch discharge. The carbon films were deposited using Ar/C2H2 gas volume ratios 100:1, 150:1, and 200:1 and plasma torch power of 600 and 870 W. It has been obtained that the increase of the torch power leads to higher film growth rate and increases surface roughness. The growth rate varies from 20 up to 425 nm/s depending on the coating formation conditions. The structure and dominant bonds of the films were investigated by Fourier transform infrared (FTIR) and Raman spectroscopy (RS) measurements. RS results indicated that the sp 2 /sp 3 content in the films depended on the torch power and C2H2 amount in argon plasma. It was demonstrated that a diamond-like / graphite-like carbon and glassy carbon films could be deposited by varying the Ar/C2H2 ratio and plasma torch power.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

Marcinauskas¹,

Grigonis²,

Valincius³

et al. 2009

Lithuanian J. Phys.

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Computer Simulations for Processing Plasmas

Bogaerts

Bleecker

Georgieva

et al. 2006

Plasma Processes & Polymers

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Summary: In this paper, some of our modeling efforts for processing plasmas are presented. We make use of fluid models or particle‐in‐cell–Monte Carlo (PIC‐MC) simulations for the plasma behavior, depending on the application. Fluid models are most suitable to describe the detailed plasma chemistry, like the formation and growth of nanoparticles in so‐called dusty plasmas, and for dielectric barrier discharges (DBDs) at atmospheric pressure. PIC‐MC simulations are the best choice to describe magnetron discharges, operating at low pressure, and for dealing with the plasma dynamics in single‐ and dual‐frequency rf discharges. Finally, we also apply molecular dynamics (MD) simulations for plasma‐surface interaction, more specifically for the plasma deposition of diamond‐like carbon (DLC) films.

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H₂: The Critical Juncture between Polymerization and Dissociation of Hydrocarbons in a Low‐temperature Plasma

Hansen

Sanden

Engeln

2011

Plasma Processes & Polymers

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The chemistry in an argon plasma jet, admixed with a small percentage of CH4, C2H2, H2 and mixtures thereof, is investigated by means of residual gas a4lysis. Polymerization of such hydrocarbon precursors is known to occur when their densities exceed the Ar+ ion density. This paper shows that polymerization also occurs for precursor gas flows far below the initial Ar+ ion flow emanating from the plasma source. This is entirely due to the negative effect of H2 on the Ar+ ion density. Adding 1–2% of H2 to the total argon and hydrocarbon gas flow suffices to initiate polymerization. Although, H2 can be injected directly into the system, fragmentation of the hydrocarbon precursors themselves can likewise supply (part of) the required H2. Polymerization is furthermore enhanced when both precursors are used together. The contribution of C3Hy species to the plasma chemistry will likewise be substantiated.

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Plasma chemistry during deposition of a-C:H

Cited by 32 publications

References 16 publications

Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

Computer Simulations for Processing Plasmas

H₂: The Critical Juncture between Polymerization and Dissociation of Hydrocarbons in a Low‐temperature Plasma

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Plasma chemistry during deposition of a-C:H

Cited by 32 publications

References 16 publications

Influence of torch power and Ar/C2H2ratio on structure of amorphous carbon films

Influence of torch power and Ar/C2H2ratio on structure of amorphous carbon films

Computer Simulations for Processing Plasmas

H2: The Critical Juncture between Polymerization and Dissociation of Hydrocarbons in a Low‐temperature Plasma

Contact Info

Product

Resources

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Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

Influence of torch power and Ar/C₂H₂ratio on structure of amorphous carbon films

H₂: The Critical Juncture between Polymerization and Dissociation of Hydrocarbons in a Low‐temperature Plasma