Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD

Sahu, Bibhuti Bhusan; Yin, Yongyi; Lee, J. S.; Han, Jeon G.; Shiratani, Masaharu

doi:10.1088/0022-3727/49/39/395203

Cited by 6 publications

(2 citation statements)

References 59 publications

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“…6(a)], so as to maintain the local plasma equilibrium and plasma pressure (=n 0 Â T e ). 73 Fig. 6(a) and (b) also show that at a pressure of B120 mTorr, there is a significant enhancement in the ionization at a low T e .…”

Section: Plasma Chemistry and Energy Deposition On The Substratementioning

confidence: 69%

Simple realization of efficient barrier performance of a single layer silicon nitride film via plasma chemistry

Lee

Sahu

Han

2016

Phys. Chem. Chem. Phys.

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Due to the problem of degradation by moisture or oxygen, there is growing interest in efficient gas diffusion barriers for organic optoelectronic devices. Additionally, for the continuous and long-term operation of a device, dedicated flexible thin film encapsulation is required, which is the foremost challenge. Many efforts are being undertaken in the plasma assisted deposition process control for the optimization of film properties. Control of the plasma density along with the energy of the principal plasma species is critical to inducing alteration of the plasma reactivity, chemistry, and film properties. Here, we have used the radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) technique to deposit amorphous silicon nitride (SiN) barrier films onto a plastic substrate at different pressures. A large part of our efforts is devoted to a detailed study of the process parameters controlling the plasma treatment. Numerous plasma diagnostic techniques combined with various characterization tools are purposefully used to characterize and investigate the plasma environment and the associated film properties. This contribution also reports a study of the correlations between the plasma chemistry and the chemical, mechanical, barrier, and optical properties of the deposited films. The data reveal that the film possesses a very low stress for the condition where the net energy imparted on the substrate is at a minimum. Simultaneously, a relatively high ion flux and high energy of the ions impinging on the film growth surfaces are crucial for controlling the film stress and the resulting barrier properties.

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Section: Plasma Chemistry and Energy Deposition On The Substratementioning

confidence: 69%

Simple realization of efficient barrier performance of a single layer silicon nitride film via plasma chemistry

Lee

Sahu

Han

2016

Phys. Chem. Chem. Phys.

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“…It was found that in low-pressure DF plasmas, the phase relations between the two frequencies and stochastic (or collisionless) heating play an important role in the plasma mechanism [26][27][28][29][30]. The DF excitation can facilitate separate control of the plasma densities and energies [23,24,26,31,32] to induce modification of plasma reactivity, chemistry and thin film properties [33][34][35][36][37][38]. Under atmospheric pressure, however, due to the high gas density and the more frequent collisions between ions with electrons the gas molecules, the ion energy becomes very small [39].…”

Section: Introductionmentioning

confidence: 99%

Atmospheric-pressure silica-like thin film deposition using 200 kHz/13.56 MHz dual frequency excitation

Liu¹,

Elam²,

Zoethout³

et al. 2019

J. Phys. D: Appl. Phys.

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Atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) was used to synthesize silica-like thin films on polyethylene 2, 6 naphthalate (PEN) substrate with hexamethyldisiloxane (HMDSO) as the precursor and Ar/O2/N2 mixture as the working gas. A dual frequency (DF) excitation consisting of 200 kHz and 13.56 MHz frequencies was employed as the plasma source. The results have shown that compared to the single LF discharges, the DF excitation helps to improve plasma uniformity with less filaments. This could help to reduce the macro-defects and therefore to improve the permeation performance of the barriers. Besides, due to the increased electron density and gas temperature, the DF excitation demonstrates a more efficient breaking of Si-CH3 bonds and therefore more oxidized structures of the deposited silica-like thin films.

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Exploring the influence of gas flow rate on surface charging issue during plasma etching

Zhang

2022

Pramana - J Phys

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Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD

Cited by 6 publications

References 59 publications

Simple realization of efficient barrier performance of a single layer silicon nitride film via plasma chemistry

Simple realization of efficient barrier performance of a single layer silicon nitride film via plasma chemistry

Atmospheric-pressure silica-like thin film deposition using 200 kHz/13.56 MHz dual frequency excitation

Exploring the influence of gas flow rate on surface charging issue during plasma etching

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