Plasma parameters of very high target power density magnetron sputtering

Posadowski, Witold

doi:10.1016/s0040-6090(01)01028-8

Cited by 49 publications

(26 citation statements)

References 17 publications

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“…High discharge power makes Langmuir probe measurements difficult or even impossible to be done. The main problem arises from the fact of excessive probe tip heating during diagnosis of electron saturation region of the probe I-V characteristics [29]. While the tip temperature increases, the probe may emit electrons (perturbations are introduced to the plasma being measured) or may become melted (destruction of measuring tool).…”

Section: The Langmuir Probe Measurementsmentioning

confidence: 99%

“…First of all, if the ion density (plasma density assuming plasma quasi-neutrality) is to be calculated then the ion mass has to be known. As the average or pulse discharge power is high then a significant contribution of the self-sputtering phenomenon to the discharge maintaining mechanisms should be taken into account [7,29,35]. It was published previously [34] that contribution of the self-sputtering phenomenon to the discharge maintaining mechanisms may be sufficiently high to sustain the pulsed magnetron discharge after argon flow had been cut off.…”

Section: The Langmuir Probe Measurementsmentioning

confidence: 99%

“…First of all the effects of magnetic field presence [21,24,26,44], geometrical characteristics of the probes [27,28] and discharge power [29,30] have to be taken into account to calculate reliable plasma parameters from Langmuir probe I-V characteristic. Fortunately, considering experimental conditions of magnetron sputtering deposition processes, the plasma parameters may be calculated from Langmuir probe I-V characteristic basing on quite simple equations and procedures, even regarding time-resolved analysis [18,20,28,[30][31][32][33][41][42][43].…”

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confidence: 99%

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The impact of medium frequency pulsed magnetron discharge power on the single probe Langmuir measurements and resulted plasma parameters

Wiatrowski

Posadowski

2016

Materials Science-Poland

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The resonant type power supplies of medium frequency designed for magnetron sputtering processes often use pulse density modulation to regulate the average discharge power level. While the output power level changes then number of pulses in a group changes, but the discharge current pulses are the same from pulse to pulse: their parameters (duration time, amplitude) do not change with the discharge power. The goal of this paper is to present the influence of medium frequency discharge power level on the direct current I-V characteristics of a single Langmuir probe and resulting plasma parameters caused by the pulse density modulation. The sputtering processes of titanium and copper were diagnosed at two spatial positions. The measured Langmuir probe I-V characteristics showed strong dependence on the discharge power. As the discharge powering pulses stay the same with the discharge power level change, such influence was unlikely to occur. Using time-resolved analysis of probe current waveforms the origin of this influence was indicated. The influence of discharge power level on the single probe Langmuir I-V characteristics and resulting plasma parameters was eliminated using a simple method of scaling the results. Finally, the reliable plasma parameters were calculated.

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Section: The Langmuir Probe Measurementsmentioning

confidence: 99%

Section: The Langmuir Probe Measurementsmentioning

confidence: 99%

mentioning

confidence: 99%

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The impact of medium frequency pulsed magnetron discharge power on the single probe Langmuir measurements and resulted plasma parameters

Wiatrowski

Posadowski

2016

Materials Science-Poland

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“…It was made by forming an electrical-conductive base layer through magnetron sputtering deposition of copper. The process of sputtering was made in both standard mode (with labour gas, Ar) and new one self-sustaining mode (without labour gas) [2,3,4]. Additionally, the deposition of electrical-conductive base layer was made by both static mode (without movement of test samples during process) and by dynamic mode (with movement of test samples during process).…”

Section: Test Samplesmentioning

confidence: 99%

Numerical Modeling of Electrical Resistance of Interconnections in High-Tech Multilayer PCBs Manufactured by Magnetron Sputtering Deposition of Copper

Borecki

Wymysłowski

2007

2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Sys

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In the paper, authors focus on application of numerical simulation methods along with the experimental measurements to access the electrical resistance of interconnections in PCB (Printed Circuit Board). The comparison of experimental and numerical results allow to define the design rules of interconnection properties and specification of interconnection and technology details depending on the selected application. Additionally, it is believed to allow course prediction of deposition process of conductive layer on via walls, without necessity of performing costly and time consuming experiments. In the paper authors present results and investigations which should lead to manufacture interconnections with aspect ratio (relation of via deep to via diameter) higher than 1, and diameter of via in the range of 25 to 150 ptm.

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“…The direct current SSS processes [4,5] are often affected by instabilities caused by uncontrolled arc discharges, typically associated with high-density plasmas. That could be one of the reasons why the direct current SSS process has not found wide use in industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Standard and self-sustained magnetron sputtering deposited Cu films investigated by means of AFM and XRD

Wiatrowski

Posadowski

Jóźwiak

et al. 2011

Microelectronics Reliability

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Plasma parameters of very high target power density magnetron sputtering

Cited by 49 publications

References 17 publications

The impact of medium frequency pulsed magnetron discharge power on the single probe Langmuir measurements and resulted plasma parameters

The impact of medium frequency pulsed magnetron discharge power on the single probe Langmuir measurements and resulted plasma parameters

Numerical Modeling of Electrical Resistance of Interconnections in High-Tech Multilayer PCBs Manufactured by Magnetron Sputtering Deposition of Copper

Standard and self-sustained magnetron sputtering deposited Cu films investigated by means of AFM and XRD

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