Plasma phase transition

Norman, Henri E; Saitov, I. M.

doi:10.3367/ufne.2021.07.039004

Cited by 13 publications

(6 citation statements)

References 230 publications

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“…1, b). Also note the analogy between the decrease in the thermal ionization energy of donors with their concentration in semiconductors and the decrease in the energy of " cold ionization" of metal vapors with the concentration of metal atoms, when the incipience of the c-band appears [27] (see also [28,29]).…”

Section: General Relationshipsmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

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A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature Tj using the standard approach within the framework of the two-band model. The shift of the top of the v-band (the bottom of the c-band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature Tj are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall coefficient of moderately compensated p-Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n-Ge, as well as n- and p-Si crystals on the insulator side of the Mott insulator--metal concentration phase transition. Keywords: bulk crystals of germanium and silicon, hydrogen-like acceptors and donors, holes and electrons, band and hopping motion of charge carriers.

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Section: General Relationshipsmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

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“…In addition, detailed overviews of the obtained results also appear in the monographs and reviews. [5][6][7][8][9]…”

Section: Historymentioning

confidence: 99%

Plasma phase transition in historical aspect and the role of bound states

Хомкин

Шумихин

2022

Contributions to Plasma Physics

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This paper considers the problem of the existence of the plasma phase transition (PPT) in Coulomb systems. The main focus is on the role of the bound states. We declare that the existence of bound states and the need to consider them into account is determined largely by the methodology of the PPT search. We consider phase transitions in classical Coulomb models and hydrogen plasma and point out that electron‐ion recombination is the dominant process in numerical simulation.

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“…The existence of two distinct liquid forms in a single-component substance is more unusual, since liquids lack the long-range order common to crystals. However, the existence of multiple amorphous liquid states in a single-component substance, a phenomenon known as “liquid polyamorphism”, − has been observed or predicted in a wide variety of substances, such as superfluid helium, , high-pressure hydrogen, − sulfur, phosphorus, , carbon, silicon, − silica, , selenium and tellurium, , and cerium . Liquid polyamorphism is also highly plausible in deeply supercooled liquid water. − ,− …”

Section: Introductionmentioning

confidence: 99%

Interfacial Properties of Fluids Exhibiting Liquid Polyamorphism and Water-Like Anomalies

et al. 2023

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It has been hypothesized that liquid polyamorphism, the existence of multiple amorphous states in a singlecomponent substance, may be caused by molecular or supramolecular interconversion. A simple microscopic model [Caupin and Anisimov, Phys. Rev. Lett. 2021, 127, 185701] introduces interconversion in a compressible binary lattice to generate various thermodynamic scenarios for fluids that exhibit liquid polyamorphism and/or water-like anomalies. Using this model, we demonstrate the dramatic effects of interconversion on the interfacial properties. In particular, we find that the liquid−vapor surface tension exhibits either an inflection point or two extrema in its temperature dependence. Correspondingly, we observe anomalous behavior of the interfacial thickness and a significant shift in the location of the concentration profile with respect to the location of the density profile.

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Plasma phase transition

Cited by 13 publications

References 230 publications

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

Plasma phase transition in historical aspect and the role of bound states

Interfacial Properties of Fluids Exhibiting Liquid Polyamorphism and Water-Like Anomalies

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