Plasma polymerized methyl methacrylate gate dielectric for organic thin-film transistors

Lim, Jae-Sung; Shin, Paik-Kyun; Lee, Boong-Joo; Lee, Sunwoo

doi:10.1016/j.orgel.2010.02.005

Cited by 17 publications

(5 citation statements)

References 17 publications

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“…The primary function of dielectric layer is to provide a separation between semiconductor and important factor to determine characteristics of the device. The selection of dielectric materials is very important in order to prevent the high leakage current that occurs between the gate metal and semiconductor channel in OFETs device [4][5]. It also determines the mobility and trapping charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of PVDF-TrFE/PMMA: TiO<sub>2</sub> Multilayer Dielectric Thin Films

Ismail

Wahid

Zulkefle

et al. 2012

AMR

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This paper reports on the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film. Two samples were fabricated on ITO substrates; one with PVDF-TrFE only and another PMMA:TiO2 on PVDF-TrFE on (PVDF-TrFE/PMMA:TiO2). Both samples were produced by spin coating method. Dielectric properties were characterized using impedance spectroscopic. Dielectric constant, k, capacitance and dielectric loss, tan δ values of PMMA:TiO2/PVDF-TrFE were measured in the frequency range 0 – 50 kHz. The result for dielectric loss did not show any significant different between the samples with and without nanocomposite PVDF-TrFE layer. However, the dielectric constant are affected when depositing a nanocomposite PVDF-TrFE layer on PMMA:TiO2. The dielectric constant is decreased by 0.3 from 7.9 to 7.6.

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Section: Introductionmentioning

confidence: 99%

Dielectric Properties of PVDF-TrFE/PMMA: TiO<sub>2</sub> Multilayer Dielectric Thin Films

Ismail

Wahid

Zulkefle

et al. 2012

AMR

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“…AFM is a high resolution type of scanning probe microscopy [16]. To find the better process condition of ppMMA as gate dielectric for OTFT, the surface morphology of vacuum-evaporated pentacene (80 nm) on ppMMA/Si was investigated.…”

Section: Surface Morphology Of the Pentacene/ppmma/simentioning

confidence: 99%

Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

Ao¹,

Lim²,

Shin³

2011

Journal of Electrical Engineering and Technology

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-Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to 150 °C. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the ppMMA, dielectric constant, leakage current density, and hysteresis.

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“…As an example, the MIS capacitor is routinely used to study the properties of semiconductor/insulator interface [10] in silicon MOS systems. In organic semiconductor-based systems as well, the MIS capacitor has been used to estimate bulk trap charges from hysteresis [11][12][13][14] observed between capacitance measured at low and high frequencies [15], unintentional doping from the voltage-dependent capacitance characteristics [16,17] and interface state density from frequency dependent conductance [18][19][20]. However, a drawback of MIS capacitors is that they provide valuable information only when the device operates away from the strong accumulation condition in which the capacitance saturates to a constant value irrespective of the nature of semiconductor/insulator interface.…”

Section: Introductionmentioning

confidence: 99%

Threshold voltage extraction for organic thin film transistor in linear region using asymmetric metal insulator semiconductor capacitive test structure

Agarwal

2019

Semicond. Sci. Technol.

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Metal Insulator Semiconductor (MIS) capacitors are commonly used as a test structure for characterization of semiconductor/insulator interface. However, MIS devices do not provide useful information in strong accumulation or inversion mode as the capacitance saturates to a constant value. An MIS capacitor with area asymmetry on the other hand, exhibits a gate voltage dependent capacitance in strong accumulation mode and can be used to obtain additional useful information about the semiconductor/insulator interface. The present work describes the use of asymmetrical metal-insulator-semiconductor device for characterization of the threshold voltage in metal-insulator-organic test structures. Simulation results are presented to show that the threshold voltage extracted from these devices not only matches with that extracted from current-voltage characteristics of organic thin film transistors in the linear region but is also much less sensitive to source contact resistance. The experimental results obtained with pentacene as active semiconductor and poly-vinyl-phenol as the dielectric are also presented to demonstrate the operation and merits of the proposed technique.

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Plasma polymerized methyl methacrylate gate dielectric for organic thin-film transistors

Cited by 17 publications

References 17 publications

Dielectric Properties of PVDF-TrFE/PMMA: TiO<sub>2</sub> Multilayer Dielectric Thin Films

Dielectric Properties of PVDF-TrFE/PMMA: TiO<sub>2</sub> Multilayer Dielectric Thin Films

Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

Threshold voltage extraction for organic thin film transistor in linear region using asymmetric metal insulator semiconductor capacitive test structure

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