Plasma reactor design for the selective etching of SiO2 on Si

Heinecke, R. A.

doi:10.1016/0038-1101(76)90186-6

Cited by 48 publications

(13 citation statements)

References 4 publications

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“…The issue of additives (e.g., H 2 ) or alternative gases (C 2 F 6 , C 3 F 8 , CHF 3 ) to increase selectivity with respect to silicon was discussed extensively by Heinecke. 28,29 The early plasma reactors were barrel type, where wafers were placed in a quartz chamber with external electrodes 30 (or a coil- Fig. 1).…”

Section: Brief Historymentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

673

422

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The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly,the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon,silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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Section: Brief Historymentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

673

422

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“…The concentration of F as well as that of C are considerably smaller than that of the previous report [I]. This may be ascribed to the presence of H species which react with F species decomposed from CF, and result in the formation of H F molecules [7]. The deposition rates shown in Fig.…”

Section: Resultsmentioning

confidence: 58%

Preparation and Properties of Magnetron Sputtered Fluorinated and Hydrogenated Amorphous SiC Films

Saito

Tanaka

1986

phys. stat. sol. (a)

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Fluorinated and hydrogenated amorphous silicon carbon alloy films are prepared by magnetron sputtering of silicon in Ar-H,-CF, gas mixtures. The dependence of structural, optical, and optoelectronic properties of the films on the partial pressure of CF, are investigated. It is found that the photosensitivity of magnetron sputtered hydrogenated amorphous silicon is improved by one order of magnitude, accompanied by a slight increase in the optical band gap, by the introduction of CFp Pluorisierte und hydrogenisierte amorphe Silizium-Kohlenstoff-Legierungsschichten werden durch Magnetron-Sputtern von Silizium in Ar-H,-CF,-Gasmischungen hergestellt. Die Abhingigkeit der strukturellen, optischen und elektrooptischen Eigenschaft von CF,-Partialdruck der Schichten wird untersucht. Es wird gefunden, daD die Photoempfindliohkeit des Magnetrongesputterten hydrogenisierten amorphen Silizium etwa um eine GroBenordnung bei Einleitung von CF, verbessern wird, und daB dieses mit einer schwachen Zunahme der optischen Energieliicke verbunden ist. l ) Johoku, Hamamatsu 432, Japan.

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“…Although adjusting plasma conditions remains an art, high selectivity is achievable, and high etch rates for oxide (600-1000 A/min) and nitride (>1000 À/min) have been demonstrated (55,60,62,63,64)-A note of caution is in order for interpreting the selective etching of nitride films. Generally, stoichiometric Si 3 N 4 shows etch characteristics (46) between those of Si and Si0 2 ; however, reported selective nitride etching generally exhibits much higher etch rates than Si0 2 under the same conditions.…”

Section: 4c2 Silicon Dioxide and Silicon Nitridementioning

confidence: 98%