Plasma‐Resistant Dense Yttrium Oxide Film Prepared by Aerosol Deposition Process

Abstract

Dense yttrium oxide film was prepared on a quartz substrate by the aerosol deposition process at the room temperature. The deposition rate was very high, 60 m/h. Thick film of 10 m was easily achievable on the quartz substrate. Transmission electron microscopy showed that the film was highly dense without voids and was composed of randomly oriented Y2O3 crystallites of sizes smaller than 20 nm. The interface between the film layer and the quartz substrate was homogeneous. The film (2‐m thick) had a high transmittance (55–85%) in the wavelength region of 250‐800 nm. The mechanical properties of the film were very good. The adhesion force of the interface between the Y2O3 layer and the quartz substrate was over 80 MPa. The Vickers hardness of the film was 7.7 GPa. The film also had an excellent plasma resistance in a gas mixture of CF4/O2. Outstanding results were noted in eroded depth, surface roughness, nanostructure, and transmittance change after plasma exposure of the film.

Effects of artificial pores and purity on the erosion behaviors of polycrystalline Al2O3 ceramics under fluorine plasma

“…2)- 6) Even though plasma resistance is one of the most critical factors in selecting candidate materials for processing chamber, the primary method to estimate plasma resistance has been unbelievably simple, which is just to measure the etch depth under arbitrary fluorine plasma conditions. 5)-8) Such a method is based on the hypothesis that eroded material volume is proportional to the generation frequency of the contamination particles.…”

Enhancement of interface anchoring and densification of Y2O3 coating by metal substrate manipulation in aerosol deposition process

“…The velocity of accelerated particles in this study can be expected to be over 350 m/s, considering the flow rate of carrier gas. 1,3,6 The simplified method for estimating elevated temperature during particle collision will be discussed in Sec. III B.…”

“…Y 2 O 3 has high erosion resistance against halogen gas plasma, so it can be used as plasma-resistant materials in dry-etching process of semiconductor equipment. 6 The thermal (or plasma) spray coating process has been applied generally for fabricating the plasma-resistant Y 2 O 3 coating in semiconductor equipments, but the Y 2 O 3 coating by spray coating process contains a large number of voids and cracks so that plasma-resistance is worse compared to the sintered Y 2 O 3 . The Y 2 O 3 thick coating layer without voids and cracks is crucial to ensure the long life of semiconductor equipment components, and the AD process can be a promising solution for fabricating high-quality Y 2 O 3 thick layer.…”

Fabrication of an Yttria Thin-Wall Tube by Radial Magnetic Pulsed Compaction of Powder-Based Tapes

“…3) A candidate material that retains a higher resistance to such severe plasma etching environments is yttria (Y 2 O 3 ), as it generally shows a superior plasma and chemical resistance against etching gases of Cl, F and O as compared to Al 2 O 3 . 4) Despite these excellent properties, the practical application of Y 2 O 3 has been mostly restricted to thin coatings, rather than bulk form, owing to its poor compactability and sinterability. 4,5) Particularly, it has been very difficult to fabricate an Y 2 O 3 thin-wall tube with a stepped shape in its outer diameter, i.e.…”

“…4) Despite these excellent properties, the practical application of Y 2 O 3 has been mostly restricted to thin coatings, rather than bulk form, owing to its poor compactability and sinterability. 4,5) Particularly, it has been very difficult to fabricate an Y 2 O 3 thin-wall tube with a stepped shape in its outer diameter, i.e. etching gas jet nozzles used in the semiconductor processing chamber.…”